PNPPlastic-EncapsulateTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Powerdissipation:PD=0.4W(Tamb=25°C) •Colle

PNPPlastic-EncapsulateTransistors

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SOT-23Plastic-EncapsulateTransistors

FEATURES LowVCE(sat) ExcellentDCcurrentgaincharacteristics.Powerdissipation

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●LowVCE(sat) ●ExcellentDCcurrentgaincharacteristics.Powerdissipation

SiliconPNPtransistorinaTO-92PlasticPackage

Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features LowVCE(sat),Excellentcurrentgaincharacteristics;complementarypairwith2SC4115. Applications LowFrequencyAmplifier.

封装/外壳：TO-226-3，TO-92-3 短体（成形引线） 包装：散装 描述：TRANS PNP 20V 2A TO92S 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 短体 包装：散装 描述：TRANS PNP 20V 2A TO92S 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANSISTOR

DESCRIPTION PNPEpitaxialplanartypeSiliconTransistor FEATURES LowVCE(sat).VCE(sat)=-0.2V(Typ.)(IC/IB=-2A/-0.1A) APPLICATION Excellentcurrentgaincharacteristics Forportableequipment:(i.e.Mobilephone,MP3,MD,CD-ROM,DVD-ROM,NotebookPC,etc.)

LowVce(sat)Transistor(-20V,-3A)

Features 1)LowVCE(sat).VCE(sat)=-0.2V(Typ.)(IC/IB=-2A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2150/2SC4115S.