N-Channel Enhancement Mode Field Effect Transistor

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Pb Free/RoHS Compliant • ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101

N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002KW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance * ESD Protected * Fast Switching Cap

N-Channel Enhancement Mode Field Effect Transistor

Features • High density cell design for Low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • High saturation current capability • Low Input/Output Leakage • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Halogen free available upon reques

N-Channel SMD MOSFET ESD Protection

Features • RDS(ON) =3.0Ω, VGS=10V, @60V/0.50A • RDS(ON) =4.0Ω, VGS=4.5V, @60V/0.20A • ESD production 2kV (Human body mode) • Advanced trench process technology. • High density cell design for ultra low on-resistance. • Specially designed for battery operated system, solid-state relays dr

N-Channel MOSFET

N-Channel MOSFET FEATURE ● High density cell design for Low RDS(on) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● ESD protected APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : R

丝印代码：K72；N-Ch Small Signal MOSFET with ESD Protection

FEATURES • RDS(ON), VGS@10V, IDS@500mA=3Ω • RDS(ON), VGS@4.5V, IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Driver

丝印代码：72K；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 20

N-Channel Enhancement MOSFET

Features ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● ESD Protected 2KV HBM

丝印代码：K72；N-Ch Small Signal MOSFET with ESD Protection

FEATURES • RDS(ON), VGS@10V, IDS@500mA=3Ω • RDS(ON), VGS@4.5V, IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Driver

丝印代码：72Kc；N-Channel Enhancement Mode MOSFET

Features Low on-resistance ESD protected gate up to 2kV HBM High-speed switching Drive circuits can be simple Parallel use is easy

N沟道增强模型场效应晶体管

•低导通电阻\n•低栅极阈值电压\n•低输入电容\n•快速开关速度\n•低输入/输出泄漏\n•超小型表面贴装封装\n•针对JESD22 A114，ESD HBM=1000V，针对JESD22 C101，ESD CDM=1500V;

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : R

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : R

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : R

N-Channel Enhancement Mode Field Effect Transistor

Features • High density cell design for Low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • High saturation current capability • Low Input/Output Leakage • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Halogen free available upon reques

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

丝印代码：K72；60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

丝印代码：72K；N-Channel MOSFET

FEATURE High density cell design for Low RDS(on) Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected -CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP cap

N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002KW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance * ESD Protected * Fast Switching Cap

丝印代码：72K；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

380mA N-channel Small Signal MOSFET-60V

Features • ESD Protected • Low RDS(on) • Surface Mount Package • This is a Pb−Free Device • We declare that the material of product are Halogen Free and compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requi

60V N-Channel Enhancement Mode MOSFET - ESD Protected

文件：162.95 Kbytes Page：5 Pages

60V N-Channel Enhancement Mode MOSFET - ESD Protected

文件：131.18 Kbytes Page：5 Pages

N-Ch Small Signal MOSFET with ESD Protection

文件：533.04 Kbytes Page：4 Pages

MV MOSFET

Small Signal MOSFETS

丝印代码：702*；N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

丝印代码：702；N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

丝印代码：72***；N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

丝印代码：S72；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

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