FEATURES

• RDS(ON), VGS@10V, IDS@500mA=3Ω

• RDS(ON), VGS@4.5V, IDS@200mA=4Ω

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Very Low Leakage Current In Off Condition

• Specially Designed for Battery Operated Systems,

Solid-State Relays Drivers： Relays, Displays, Lamps,

Solenoids, Memories, etc.

• ESD Protected 2KV HBM

• In compliance with EU RoHS 2002/95/EC directives