N-Channel Enhancement Mode Field Effect Transistor

Features • High density cell design for Low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • High saturation current capability • ESD protected up to 2KV • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Halogen free available upon request

N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.3A RDS(ON)

Plastic-Encapsulate MOSFETS

FEATURE  High density cell design for LowRDS(on)  Voltage controlled small signal switch  Rugged and reliable  High saturation current capability  ESD protected APPLICATION  Load Switch for Portable Devices  DC/DC Converter

Small Signal MOSFETS

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h