N-Channel ENHANCEMENT MODE POWER MOSFET

FEATURES: * Gate-Source ESD Protected: 1500 V * Fast Switching Speed * Low On-Resistance * Low Voltage Driver APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories * Battery Operated Systems * Power Supply Converter Circuits * Load/Power Switchi

Channel Enhancement MOSFET

FEATURES • Low Gate Charge for Fast Switching. • ESD Protected Gate. APPLICATIONS • Power Management Load Switch • ESD Protected:1500V • Easily designed drive circuits

N-Channel Enhancement Mode Field Effect Transistor

Features • Low on resistance RDS(ON) • Low gate threshold voltage • Low input capacitance • ESD protected up to 2KV

MOSFET场效应管

Small Signal MOSFETS

场效应晶体管

N-Channel Enhancement MOSFET

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SOT-523 Plastic-Encapsulate Mosfets

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N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3

Features • ESD Protected • Low RDS(on) • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications

Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3

Features • ESD Protected • Low RDS(on) • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications

Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3

Features • ESD Protected • Low RDS(on) • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : R

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : R

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays

N-Channel Enhancement MOSFET

文件：169.65 Kbytes Page：3 Pages

Small Signal MOSFET 60 V, 380 mA, Single, N.Channel, SOT.23

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Small Signal MOSFET

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60V N-Channel Enhancement Mode MOSFET - ESD Protected

文件：270.89 Kbytes Page：7 Pages