N-Channel 60-V (D-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Switching Speed

N-Channel Enhancement Mode MOSFET

Features ● 60V / 0.5A, RDS(ON) = 2.5 Ω @ VGS = 10V RDS(ON) = 2.5 Ω @ VGS = 4.5V ● SOT-23 for Surface Mount Package. Applications ● Direct Logic-level Interface: TTL/CMOS. ● Drivers: Relays, Lamps, Display, Transistor, etc ● Battery Operated Systems.

Voltage controlled small signal switch

MOSFET (N-Channel) FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers

NCE N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES ● VDS = 60V,ID = 0.3A RDS(ON)

N-Channel Enhancement Mode Field Effect Transistor

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input / Output Leakage • Ultra-Small Surface Mount Package • Pb Free / RoHS Compliant • ESD HBM = 2000 V (Typical: 3000 V) as per JESD22 A114 and ESD CDM = 2000 V as per JESD2

Direct Logic-Level Interface: TTL/CMOS

GENERAL FEATURES ● VDS = 60V,ID = 0.3A RDS(ON)

N-Channel MOSFET

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High density cell design for low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • ESD Protected up to 2KV (HBM) • Marking : 72K • Halogen free available upon request by adding suff

N-Channel Enhanceent Mode Field Effect Transistor

Features ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage

Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3

Features • ESD Protected • Low RDS(on) • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications

300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Prot

N Channel MOSFET

INTERFACE AND SWITCHING APPLICATION. FEATURES • ESD Protected 2000V. • High density cell design for low RDS(ON). • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capablity.

Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3

Features • ESD Protected • Low RDS(on) • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications

N-Ch Small Signal MOSFET with ESD Protection

FEATURES • RDS(ON), VGS@10V, IDS@500mA=3Ω • RDS(ON), VGS@4.5V, IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Driver

Plastic-Encapsulate Mosfets

N-Channel MOSFET FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.

N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

N-Channel Enhancement MOSFET

Features ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● ESD Protected 2KV HBM

N-CHannel Enhancement Mode MOSFET

High Speed Switching Application Features • ESD rating: 1000V (HBM) • Low On-Resistance: RDS(on)

N-channel TrenchMOS FET

SOT-23 Plastic-Encapsu l ate MOSFET

N -Channel MOSFET Features ● High density cell design for Low RDS（on） ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● ESD protected Applications ● Load Switch for Portable Devices ● DC/DC Converter

N Channel Enhancement Mode MOSFET

FEATURE ● 60V/0.50A, RDS(ON) =2Ω @VGS = 10V ● 60V/0.20A, RDS(ON) = 4Ω@VGS = 4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and Maximum DC current capability ● ESD capability: 2000V ● SOT-23 package design

60V ESD Protected N-Channel Enhancement Mode MOSFET

RDS(ON), VGS @10V, IDS@ 500mA=2Ω RDS(ON), VGS @4.5V, IDS@ 200mA=3Ω FEATURES • Advanced Trench Process Technology • Ultra Low On Resistance : 2Ω • Fast Switching Speed : 20ns • Low Input and Output Leakage Current • 2KV ESD Protection • Specially Designed for High Speed Circuit, Battery Ope

N-Channel Advanced Power MOSFET

Features • 60V/0.2A, RDS (ON) =2500mΩ(Typ.)@VGS=10V RDS (ON) =2500mΩ(Typ.)@VGS=5V • ESD protected up to 2KV • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Desktop C

Plastic-Encapsulate MOSFETS

MOSFET( N-Channel ) Features: 1. RDS(ON) is low; 2. The control trigger is sensitive; 3. With electrostatic protection; Applications: Used for general switching and phase circuits.

SOT-23 Plastic-Encapsulate MOSFETs

N-channel MOSFET FEATURE ● High density cell design for Low RDS（on） ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● ESD protected APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● HMB ESD protected (2000V) APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

N-Channel Enhancement MOSFET

Features Low On-Resistance:RDS(ON) Low GateThresholdVoltage Low InputCapacitance Fast SwitchingSpeed Low Input/OutputLeakage ESD Protected 2KV HBM

TrenchMOS™ logic level FET

1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications 1.4 Quick reference data n Logic level compatible n Very fast switching n Subminiature surface mount package n Gate-source ESD protection diodes

60V N-Channel Mosfet

Application Direct logic-level interface: TTL/CMOS Drivers: relays, solenoids, lamps, hammers display, memories, transistors, etc. Battery operated systems Solid-state relays

Plastic-Encapsulate MOSFET

Features  High density cell design for low RDS(ON).  Voltage controlled small signal switch.  Rugged and reliable.  High saturation current capability.  ESD protected  Load Switch for Portable Devices.  DC/DC Converter.

N-Channel 60-V(D-S) MOSFET

General FEATURE ●High density cell design for Low RDS(on) ●Voltage controlled small signal switch ●Rugged and reliable ●High saturation current capability ●ESD protected 2KV HBM APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter

N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.3A RDS(ON)

N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.3A RDS(ON)

N-Channel 60 V (D-S) MOSFET

• Low on-resistance: 2 Ω • Low threshold: 2 V (typ.) • Low input capacitance: 25 pF • Fast switching speed: 25 ns • Low input and output leakage • TrenchFET® power MOSFET • 2000 V ESD protection

N-Ch Small Signal MOSFET with ESD Protection

文件：533.11 Kbytes Page：4 Pages

N-Channel SMD MOSFET ESD Protection

文件：207.62 Kbytes Page：9 Pages

300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：164.81 Kbytes Page：3 Pages

N-channel MOSFET

文件：1.46153 Mbytes Page：5 Pages

N-Channel Enhancement Mode Power MOSFET

文件：508.23 Kbytes Page：4 Pages

TrenchMOS??logic level FET

N-Channel MOSFET uses advanced trench technology

文件：641.31 Kbytes Page：2 Pages

N-Channel 60-V (D-S) MOSFET

文件：219.27 Kbytes Page：9 Pages

N-Channel 60-V (D-S) MOSFET

文件：97.16 Kbytes Page：6 Pages

N-Channel Enhancement Mode Field Effect Transistor

文件：223.49 Kbytes Page：6 Pages

N-Channel 60-V (D-S) MOSFET

文件：216.07 Kbytes Page：9 Pages

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：248 Kbytes Page：4 Pages

N-Channel Enhancement Mode Power MOSFET

文件：836.88 Kbytes Page：6 Pages

N-Channel MOSFET

文件：447.67 Kbytes Page：7 Pages

Small Signal MOSFET

文件：97.75 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

N-Channel Enhancement MOSFET

Features Low On-Resistance:RDS(ON) Low GateThresholdVoltage Low InputCapacitance Fast SwitchingSpeed Low Input/OutputLeakage ESD Protected 2KV HBM

Advanced trench MOSFETprocess technology

Features and Benefits:  Advanced trench MOSFETprocess technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  HighPower and current handing capability  Fully Avalanche Rated  ESD Protection HBM ≥ 2KV Descr

Double N-CHANNEL MOSFET in a SOT23-6L Plastic Package.

Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating:2200V HBM Applications Intended for use in general purpose switching and phase control applications.