N-Channel60-V(D-S)MOSFET

DESCRIPTION Theattachedspicemodeldescribesthetypicalelectricalcharacteristicsofthen-channelverticalDMOS.Thesubcircuitmodelisextractedandoptimizedoverthe−55to125°Ctemperaturerangesunderthepulsed0-Vto10-Vgatedrive.Thesaturatedoutputimpedanceisbestfitatthe

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowInputCapacitance •FastSwitchingSpeed

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers

NCEN-ChannelEnhancementModePowerMOSFET

GENERALFEATURES ●VDS=60V,ID=0.3A RDS(ON)

N-ChannelEnhancementModeFieldEffectTransistor

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •PbFree/RoHSCompliant •ESDHBM=2000V(Typical:3000V)asperJESD22A114 andESDCDM=2000VasperJESD2

DirectLogic-LevelInterface:TTL/CMOS

GENERALFEATURES ●VDS=60V,ID=0.3A RDS(ON)

N-ChannelMOSFET

Features •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighdensitycelldesignforlowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •ESDProtectedupto2KV(HBM) •Marking:72K •Halogenfreeavailableuponrequestbyaddingsuff

N-ChannelEnhanceentModeFieldEffectTransistor

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage

SmallSignalMOSFET60V,380mA,Single,N?묬hannel,SOT??3

Features •ESDProtected •LowRDS(on) •SurfaceMountPackage •2VPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications

300mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7002KusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgatevoltagesduringoperation.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. „FEATURES *LowReverseTransferCapacitance(CRSS=typical3.0pF) *ESDProt

NChannelMOSFET

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •ESDProtected2000V. •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapablity.

N-ChSmallSignalMOSFETwithESDProtection

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver

SmallSignalMOSFET60V,380mA,Single,N?묬hannel,SOT??3

Features •ESDProtected •LowRDS(on) •SurfaceMountPackage •2VPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications

Plastic-EncapsulateMosfets

N-ChannelMOSFET FEATURES HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch. Ruggedandreliable. Highsaturationcurrentcapability.

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

N-ChannelEnhancementMOSFET

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●ESDProtected2KVHBM

N-CHannelEnhancementModeMOSFET

HighSpeedSwitchingApplication Features •ESDrating:1000V(HBM) •LowOn-Resistance:RDS(on)

N-channelTrenchMOSFET

N-ChannelEnhancementModeMOSFET

Features ●60V/0.5A,RDS(ON)=2.5Ω@VGS=10V RDS(ON)=2.5Ω@VGS=4.5V ●SOT-23forSurfaceMountPackage. Applications ●DirectLogic-levelInterface:TTL/CMOS. ●Drivers:Relays,Lamps,Display,Transistor,etc ●BatteryOperatedSystems.

Voltagecontrolledsmallsignalswitch

MOSFET(N-Channel) FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability

SOT-23Plastic-EncapsulateMOSFET

N-ChannelMOSFET Features ●HighdensitycelldesignforLowRDS（on） ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected Applications ●LoadSwitchforPortableDevices ●DC/DCConverter

NChannelEnhancementModeMOSFET

FEATURE ●60V/0.50A,RDS(ON)=2Ω@VGS=10V ●60V/0.20A,RDS(ON)=4Ω@VGS=4.5V ●SuperhighdensitycelldesignforextremelylowRDS(ON) ●Exceptionalon-resistanceandMaximumDCcurrentcapability ●ESDcapability:2000V ●SOT-23packagedesign

60VESDProtectedN-ChannelEnhancementModeMOSFET

RDS(ON),VGS@10V,IDS@500mA=2Ω RDS(ON),VGS@4.5V,IDS@200mA=3Ω FEATURES •AdvancedTrenchProcessTechnology •UltraLowOnResistance:2Ω •FastSwitchingSpeed:20ns •LowInputandOutputLeakageCurrent •2KVESDProtection •SpeciallyDesignedforHighSpeedCircuit,BatteryOpe

N-ChannelAdvancedPowerMOSFET

Features •60V/0.2A, RDS(ON)=2500mΩ(Typ.)@VGS=10V RDS(ON)=2500mΩ(Typ.)@VGS=5V •ESDprotectedupto2KV •LowOn-Resistance •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeandGreenDevicesAvailable(RoHSCompliant) Applications •PowerManagementinDesktopC

Plastic-EncapsulateMOSFETS

MOSFET(N-Channel) Features: 1.RDS(ON)islow; 2.Thecontroltriggerissensitive; 3.Withelectrostaticprotection; Applications: Usedforgeneralswitchingandphasecircuits.

SOT-23Plastic-EncapsulateMOSFETs

N-channelMOSFET FEATURE ●HighdensitycelldesignforLowRDS（on） ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

SOT-23Plastic-EncapsulateMOSFETS

FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●HMBESDprotected(2000V) APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

TrenchMOS™logiclevelFET

1.1Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™technology. 1.2Features 1.3Applications 1.4Quickreferencedata nLogiclevelcompatiblenVeryfastswitching nSubminiaturesurfacemountpackagenGate-sourceESDprotectiondiodes

60VN-ChannelMosfet

Application Directlogic-levelinterface:TTL/CMOS Drivers:relays,solenoids,lamps,hammersdisplay, memories,transistors,etc. Batteryoperatedsystems Solid-staterelays

Plastic-EncapsulateMOSFET

Features HighdensitycelldesignforlowRDS(ON). Voltagecontrolledsmallsignalswitch. Ruggedandreliable. Highsaturationcurrentcapability. ESDprotected LoadSwitchforPortableDevices. DC/DCConverter.

N-ChannelEnhancementMOSFET

Features LowOn-Resistance:RDS(ON) LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected2KVHBM

N-Channel60-V(D-S)MOSFET

GeneralFEATURE ●HighdensitycelldesignforLowRDS(on) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected2KVHBM APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=0.3A RDS(ON)

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=0.3A RDS(ON)

N-Channel60V(D-S)MOSFET

•Lowon-resistance:2Ω •Lowthreshold:2V(typ.) •Lowinputcapacitance:25pF •Fastswitchingspeed:25ns •Lowinputandoutputleakage •TrenchFET®powerMOSFET •2000VESDprotection

N-ChSmallSignalMOSFETwithESDProtection

文件：533.11 Kbytes Page：4 Pages

N-ChannelSMDMOSFETESDProtection

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N-ChannelEnhancementModePowerMOSFET

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N-channelMOSFET

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300mA,60VN-CHANNELENHANCEMENTMODEMOSFET

文件：164.81 Kbytes Page：3 Pages

N-ChannelMOSFET

文件：447.67 Kbytes Page：7 Pages

N-Channel60-V(D-S)MOSFET

文件：219.27 Kbytes Page：9 Pages

TrenchMOS??logiclevelFET

SmallSignalMOSFET

文件：97.75 Kbytes Page：6 Pages

N-ChannelMOSFETusesadvancedtrenchtechnology

文件：641.31 Kbytes Page：2 Pages

N-Channel60-V(D-S)MOSFET

文件：97.16 Kbytes Page：6 Pages

N-Channel60-V(D-S)MOSFET

文件：216.07 Kbytes Page：9 Pages

N-ChannelEnhancementModePowerMOSFET

文件：836.88 Kbytes Page：6 Pages

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：248 Kbytes Page：4 Pages

N-ChannelEnhancementModeFieldEffectTransistor

文件：223.49 Kbytes Page：6 Pages

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description •N-channelenhancementmodefieldeffecttransistor,designedforhighspeedpulsedamplifieranddriverapplications,whichismanufactoredbytheN-ChannelDMOSprocess. Features •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitching. •Ruggeda

N-ChannelEnhancement-ModeVerticalDMOSFETs

GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

FEATURES *60VoltVCEO

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

60VN-ChannelEnhancementModeMOSFET–ESDProtected

Features RDS(ON),VGS@10V,ID@500mA

60VN-ChannelEnhancementModeMOSFET–ESDProtected

Features RDS(ON),VGS@10V,ID@500mA

N-ChannelEnhancementMOSFET

Features LowOn-Resistance:RDS(ON) LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected2KVHBM

AdvancedtrenchMOSFETprocesstechnology

FeaturesandBenefits: AdvancedtrenchMOSFETprocesstechnology SpecialdesignedforPWM,loadswitchingand generalpurposeapplications Ultralowon-resistancewithlowgatecharge HighPowerandcurrenthandingcapability FullyAvalancheRated ESDProtectionHBM≥2KV Descr

DoubleN-CHANNELMOSFETinaSOT23-6LPlasticPackage.

Features SensitivegatetriggercurrentandLowHoldingcurrent.ESDprotecteddiode. ESDrating:2200VHBM Applications Intendedforuseingeneralpurposeswitchingandphasecontrolapplications.