1.1 Description

N-channel enhancement mode field-effect transistor in a plastic package using

TrenchMOS™ technology.

1.2 Features

1.3 Applications

1.4 Quick reference data

n Logic level compatible n Very fast switching

n Subminiature surface mount package n Gate-source ESD protection diodes.

n Relay driver n High speed line driver.

n VDS £ 60 V n ID £ 340 mA

n Ptot £ 0.83 W n RDSon £ 3.9 W.