Features and Benefits:

 Advanced trench MOSFETprocess technology

 Special designed for PWM, load switching and

general purpose applications

 Ultra low on-resistance with low gate charge

 HighPower and current handing capability

 Fully Avalanche Rated

 ESD Protection HBM ≥ 2KV

Description:

It utilizes the advanced trench processing techniques to achieve extremely low on resistance and lowgatecharge.These features combine to make this design an extremely efficient and reliable device for use inPWM,

load switching and a wide variety of other applications.