Description

The H2N6668 is designed for general-purpose amplifier and switching applications.

Absolute Maximum Ratings (Ta=25°C)

• Maximum Temperatures

Storage Temperature ............................................................................................... -55~+150°C

Junction Temperature ..................................................................................... +150°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C) ..................................................................................... 65 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage..................................................................................... -80 V

BVCEO Collector to Emitter Voltage.................................................................................. -80 V

BVEBO Emitter to Base Voltage.......................................................................................... -5 V

IC Collector Current........................................................................................................... -10 A