PNP EPITAXIAL PLANAR TRANSISTOR

Description The H2N6668 is designed for general-purpose amplifier and switching applications. Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature -55~+150°C Junction

PNP EPITAXIAL PLANAR TRANSISTOR

POWER TRANSISTORS(65W)

8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 40-80 VOLTS 65 WATTS

SILICON PNP POWER DARLINGTON TRANSISTOR

SILICON PNP POWER DARLINGTON TRANSISTOR ■ SGS-THOMSON PREFERRED SALESTYPE ■ PNP DARLINGTON ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: ■ GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER

DARLINGTON POWER TRANSISTORS(PNP SILICON )

Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − hFE = 3500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667

PLASTIC MEDIUM-POWER SILICON TRANSISTORS

PLASTIC MEDIUM-POWER SILICON TRANSISTORS 8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 40-80 VOLTS 65 WATTS