PNP EPITAXIAL PLANAR TRANSISTOR

Description The H2N6668 is designed for general-purpose amplifier and switching applications. Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................... -55~+150°C Junction

PNP EPITAXIAL PLANAR TRANSISTOR

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

POWER TRANSISTORS(65W)

8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 40-80 VOLTS 65 WATTS

DARLINGTON POWER TRANSISTORS(PNP SILICON )

Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − hFE = 3500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667

SILICON PNP POWER DARLINGTON TRANSISTOR

SILICON PNP POWER DARLINGTON TRANSISTOR ■ SGS-THOMSON PREFERRED SALESTYPE ■ PNP DARLINGTON ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: ■ GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER

PLASTIC MEDIUM-POWER SILICON TRANSISTORS

PLASTIC MEDIUM-POWER SILICON TRANSISTORS 8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 40-80 VOLTS 65 WATTS