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2N603晶体管资料
2N603(A)别名：2N603(A)三极管、2N603(A)晶体管、2N603(A)晶体三极管
2N603(A)生产厂家：CSR_IDI_SCA
2N603(A)制作材料：Ge-PNP
2N603(A)性质：射频/高频放大 （HF）
2N603(A)封装形式：直插封装
2N603(A)极限工作电压：30V
2N603(A)最大电流允许值：
2N603(A)最大工作频率：40MHZ
2N603(A)引脚数：3
2N603(A)最大耗散功率：0.12W
2N603(A)放大倍数：
2N603(A)图片代号：D-9
2N603(A)vtest：30
2N603(A)htest：40000000
- 2N603(A)atest：0
2N603(A)wtest：0.12
2N603(A)代换 2N603(A)用什么型号代替：AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,3AG95A,
2N603价格
参考价格：￥96.2424
型号：2N6032 品牌：RCA 备注：这里有2N603多少钱，2025年最近7天走势，今日出价，今日竞价，2N603批发/采购报价，2N603行情走势销售排行榜，2N603报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for high voltage and high power amplifier applications. | Central |   | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N5629 2N5630 • High power dissipations APPLICATIONS • For high voltage and high power amplifier applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N5629 2N5630 APPLICATIONS • For high voltage and high power amplifier applications | JMNIC 锦美电子 | | ||
POWER TRANSISTORS COMPLEMENTARY SILICON HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100-120-140 VOLTS 200 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
POWER TRANSISTORSS PNP SILICON HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100-120-140 VOLTS 200 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N5629 2N5630 • High power dissipations APPLICATIONS • For high voltage and high power amplifier applications | SAVANTIC | | ||
POWER TRANSISTORS COMPLEMENTARY SILICON HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100-120-140 VOLTS 200 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
POWER TRANSISTORSS PNP SILICON HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100-120-140 VOLTS 200 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N5631 • High collector sustaining voltage • High DC current gain • Low collector saturation voltage APPLICATIONS • For high power audio amplifier and high voltage switching regulator circuits applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N5631 • High collector sustaining voltage • High DC current gain • Low collector saturation voltage APPLICATIONS • For high power audio amplifier and high voltage switching regulator circuits applications | ISC 无锡固电 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
PNP SILICON POWER TRANSISTOR 140 VOLTS, 200 WATTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6031 is a 16 Ampere PNP Silicon Power Transistor designed for use in high power amplifiers and high voltage switching regulator circuits. MARKING: FULL PART NUMBER | Central | | ||
POWER TRANSISTORS COMPLEMENTARY SILICON High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage – VCEO(sus) = 140 Vdc • High DC Current Gain – @ IC = 8.0 Adc hFE = 15 (Min) • Low Collector–Emitte | ONSEMI 安森美半导体 | | ||
NPN POWER SILICON TRANSISTOR
| Microsemi 美高森美 | | ||
HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS
| GESS | | ||
HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS
| GESS | | ||
NPN POWER SILICON TRANSISTOR
| Microsemi 美高森美 | | ||
SILICON POWER DARLINGTON TRANSISTORS SILICON POWER DARLINGTON TRANSISTORS Designed for General -Purpose Amplifier & Low Speed Switching Applications. | CDIL | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N6037/6038/6039 • DARLINGTON • High DC current gain APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications | ISC 无锡固电 | | ||
COMPLEMENTARY SILICON DARLINGTON TRANSISTORS DESCRIPTION: 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER | Central | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N6037/6038/6039 • DARLINGTON • High DC current gain APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications | SAVANTIC | | ||
MIDIUM POWER DAR;OMGTONS DESCRIPTION The 2N6037, 2N6038 and 2N6039 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec To-126 plastic package. The complementary PNP types are the 2N6034, 2N6035 and 2N6036 respectively. | STMICROELECTRONICS 意法半导体 | | ||
SILICON POWER DARLINGTON TRANSISTORS SILICON POWER DARLINGTON TRANSISTORS Designed for General -Purpose Amplifier & Low Speed Switching Applications. | CDIL | | ||
Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 in • Pb−Free Pa | ONSEMI 安森美半导体 | | ||
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER | Central | | ||
SILICON POWER DARLINGTON TRANSISTORS SILICON POWER DARLINGTON TRANSISTORS Designed for General -Purpose Amplifier & Low Speed Switching Applications. | CDIL | | ||
COMPLEMENTARY SILICON DARLINGTON TRANSISTORS DESCRIPTION: 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N6037/6038/6039 • DARLINGTON • High DC current gain APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N6037/6038/6039 • DARLINGTON • High DC current gain APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications | SAVANTIC | | ||
MIDIUM POWER DAR;OMGTONS DESCRIPTION The 2N6037, 2N6038 and 2N6039 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec To-126 plastic package. The complementary PNP types are the 2N6034, 2N6035 and 2N6036 respectively. | STMICROELECTRONICS 意法半导体 | | ||
SILICON POWER DARLINGTON TRANSISTORS SILICON POWER DARLINGTON TRANSISTORS Designed for General -Purpose Amplifier & Low Speed Switching Applications. | CDIL | | ||
Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 in • Pb−Free Pa | ONSEMI 安森美半导体 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N6037/6038/6039 • DARLINGTON • High DC current gain APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications | ISC 无锡固电 | | ||
SILICON POWER DARLINGTON TRANSISTORS SILICON POWER DARLINGTON TRANSISTORS Designed for General -Purpose Amplifier & Low Speed Switching Applications. | CDIL | | ||
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER | Central | | ||
PNP Darlington Power Transistor Features • Halogen free available upon request by adding suffix -HF • This device is designed for general purpose amplifier and low-speed switching applications. • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 fla | MCC | | ||
MIDIUM POWER DAR;OMGTONS DESCRIPTION The 2N6037, 2N6038 and 2N6039 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec To-126 plastic package. The complementary PNP types are the 2N6034, 2N6035 and 2N6036 respectively. | STMICROELECTRONICS 意法半导体 | | ||
SILICON DARLINGTON POWER TRANSISTOR DESCRIPTION: 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY SILICON DARLINGTON TRANSISTORS DESCRIPTION: 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N6037/6038/6039 • DARLINGTON • High DC current gain APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications | SAVANTIC | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The 2N6037, 2N6038 and 2N6039 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec To-126 plastic package. The complementary PNP types are the 2N6034, 2N6035 and 2N6036 respectively. | STMICROELECTRONICS 意法半导体 | | ||
SILICON POWER DARLINGTON TRANSISTORS SILICON POWER DARLINGTON TRANSISTORS Designed for General -Purpose Amplifier & Low Speed Switching Applications. | CDIL | | ||
SILICON POWER DARLINGTON TRANSISTORS SILICON POWER DARLINGTON TRANSISTORS Designed for General -Purpose Amplifier & Low Speed Switching Applications. | CDIL | | ||
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER | Central | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N6034/6035/6036 • DARLINGTON • High DC current gain APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N6034/6035/6036 • DARLINGTON • High DC current gain APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications | SAVANTIC | | ||
COMPLEMENTARY SILICON DARLINGTON TRANSISTORS DESCRIPTION: 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
MIDIUM POWER DAR;OMGTONS DESCRIPTION The 2N6037, 2N6038 and 2N6039 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec To-126 plastic package. The complementary PNP types are the 2N6034, 2N6035 and 2N6036 respectively. | STMICROELECTRONICS 意法半导体 | | ||
SILICON POWER DARLINGTON TRANSISTORS SILICON POWER DARLINGTON TRANSISTORS Designed for General -Purpose Amplifier & Low Speed Switching Applications. | CDIL | | ||
SILICON POWER DARLINGTON TRANSISTORS SILICON POWER DARLINGTON TRANSISTORS Designed for General -Purpose Amplifier & Low Speed Switching Applications. | CDIL | | ||
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER | Central | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N6034/6035/6036 • DARLINGTON • High DC current gain APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications | ISC 无锡固电 | | ||
COMPLEMENTARY SILICON DARLINGTON TRANSISTORS DESCRIPTION: 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 in • Pb−Free Pa | ONSEMI 安森美半导体 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2N6034/6035/6036 • DARLINGTON • High DC current gain APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications | SAVANTIC | | ||
MIDIUM POWER DAR;OMGTONS DESCRIPTION The 2N6037, 2N6038 and 2N6039 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec To-126 plastic package. The complementary PNP types are the 2N6034, 2N6035 and 2N6036 respectively. | STMICROELECTRONICS 意法半导体 | | ||
SILICON POWER DARLINGTON TRANSISTORS SILICON POWER DARLINGTON TRANSISTORS Designed for General -Purpose Amplifier & Low Speed Switching Applications. | CDIL | | ||
SILICON POWER DARLINGTON TRANSISTORS SILICON POWER DARLINGTON TRANSISTORS Designed for General -Purpose Amplifier & Low Speed Switching Applications. | CDIL | |
2N603产品属性
- 类型
描述
- 型号
2N603
- 制造商
Microsemi Corporation
- 功能描述
TRANS GP BJT PNP 120V 16A 3PIN TO-3 - Bulk
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-3 PNP -120V -16A 200W BEC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
3478 |
原装现货,当天可交货,原型号开票 |
|||
ST/意法 |
22+ |
TO126 |
100000 |
代理渠道/只做原装/可含税 |
|||
MOTOROLA/摩托罗拉 |
25+ |
126 |
860000 |
明嘉莱只做原装正品现货 |
|||
MOTOROLA/摩托罗拉 |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
ON/安森美 |
24+ |
TO-225 |
30000 |
原装正品公司现货,假一赔十! |
|||
N/A |
23+ |
NA |
2305 |
专做原装正品,假一罚百! |
|||
ON/安森美 |
23+ |
TO-3 |
5880 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
ON/安森美 |
21+ |
TO-225 |
8080 |
只做原装,质量保证 |
|||
MOT |
24+ |
TO-3 |
10000 |
||||
MOTOROLA/摩托罗拉 |
专业铁帽 |
TO-3 |
1500 |
原装铁帽专营,代理渠道量大可订货 |
2N603芯片相关品牌
2N603规格书下载地址
2N603参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2N6047
- 2N6046
- 2N6045
- 2N6044
- 2N6043
- 2N6042G
- 2N6042
- 2N6041
- 2N6040G
- 2N6040
- 2N604(A)
- 2N6039G
- 2N6039
- 2N6038G
- 2N6038
- 2N6037
- 2N6036G
- 2N6036
- 2N6035G
- 2N6035
- 2N6034G
- 2N6034
- 2N6033
- 2N6032
- 2N6031
- 2N6030
- 2N603(A)
- 2N6029
- 2N6028G
- 2N6028
- 2N6027G
- 2N6027
- 2N6026
- 2N6025
- 2N6024
- 2N6023
- 2N6022
- 2N6021
- 2N602(A)
- 2N6017
- 2N6016
- 2N6015
- 2N6014
- 2N6013
- 2N6012
- 2N6011
- 2N6010
- 2N601
- 2N6009
- 2N6008
- 2N6007
- 2N60_18
- 2N60_15
- 2N60_14
- 2N60_12
- 2N60_11
- 2N5I55
- 2N5991
- 2N5990
- 2N5989
- 2N5988
- 2N5987
- 2N5986
- 2N5973
- 2N5972
- 2N5971
2N603数据表相关新闻
2N6027RLRAG坚持只做原装货
2N6027RLRAG坚持只做原装货
2024-9-192N60G-TO220FT-A-TG_UTC代理商
2N60G-TO220FT-A-TG_UTC代理商
2023-3-72N5401L-SOT89R-B-TG_UTC代理商
2N5401L-SOT89R-B-TG_UTC代理商
2023-2-102N60L-TO220F1T-TG_UTC代理商
2N60L-TO220F1T-TG_UTC代理商
2023-2-32N6043G
原装代理
2022-7-232N5245
2N5245，当天发货0755-82732291全新原装现货或门市自取.
2020-8-5
DdatasheetPDF页码索引
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