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2N6035晶体管资料

  • 2N6035别名:2N6035三极管、2N6035晶体管、2N6035晶体三极管

  • 2N6035生产厂家:美国摩托罗拉半导体公司_美国国民半导体公司_德国电

  • 2N6035制作材料:Si-P+Darl+Di

  • 2N6035性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2N6035封装形式:直插封装

  • 2N6035极限工作电压:60V

  • 2N6035最大电流允许值:4A

  • 2N6035最大工作频率:<1MHZ或未知

  • 2N6035引脚数:3

  • 2N6035最大耗散功率:40W

  • 2N6035放大倍数:β>750

  • 2N6035图片代号:B-21

  • 2N6035vtest:60

  • 2N6035htest:999900

  • 2N6035atest:4

  • 2N6035wtest:40

  • 2N6035代换 2N6035用什么型号代替:BD262,BD676,BD678,BD778,

2N6035价格

参考价格:¥4.1913

型号:2N6035 品牌:Central 备注:这里有2N6035多少钱,2026年最近7天走势,今日出价,今日竞价,2N6035批发/采购报价,2N6035行情走势销售排行榜,2N6035报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N6035

Plastic Darlington Complementary Silicon Power Transistors

Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 in • Pb−Free Pa

ONSEMI

安森美半导体

2N6035

SILICON POWER DARLINGTON TRANSISTORS

SILICON POWER DARLINGTON TRANSISTORS Designed for General -Purpose Amplifier & Low Speed Switching Applications.

CDIL

2N6035

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER

CENTRAL

2N6035

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N6037/6038/6039 • DARLINGTON • High DC current gain APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications

ISC

无锡固电

2N6035

COMPLEMENTARY SILICON DARLINGTON TRANSISTORS

DESCRIPTION: 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N6035

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N6037/6038/6039 • DARLINGTON • High DC current gain APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications

SAVANTIC

2N6035

MIDIUM POWER DAR;OMGTONS

DESCRIPTION The 2N6037, 2N6038 and 2N6039 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec To-126 plastic package. The complementary PNP types are the 2N6034, 2N6035 and 2N6036 respectively.

STMICROELECTRONICS

意法半导体

2N6035

4.0 A,60 V,PNP 达林顿双极功率晶体管

The Power 4 A, 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. • High DC Current Gain -hFE = 2000 (Typ) @ IC = 2.0 Adc\n• Collector-Emitter Sustaining Voltage - @ 100 mAdcVCEO(sus) = 60 Vdc (Min) - 2N6035, 2N6038VCEO(sus) = 80 Vdc (Min) - 2N6036, 2N6039\n• Forward Biased Second Breakdown Current CapabilityIS/b = 1.5 Adc @ 25 Vdc\n• Monolithic Construction with ;

ONSEMI

安森美半导体

2N6035

Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington

CENTRAL

2N6035

Trans Darlington PNP 60V 4A 3-Pin TO-126 Box

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N6035

Silicon PNP Power Transistors

文件:106.45 Kbytes Page:3 Pages

SAVANTIC

2N6035

Plastic Darlington Complementary Silicon Power Transistors

文件:85.81 Kbytes Page:6 Pages

ONSEMI

安森美半导体

2N6035

Plastic Darlington Complementary Silicon Power Transistors

文件:133.15 Kbytes Page:6 Pages

ONSEMI

安森美半导体

SILICON POWER DARLINGTON TRANSISTORS

SILICON POWER DARLINGTON TRANSISTORS Designed for General -Purpose Amplifier & Low Speed Switching Applications.

CDIL

Plastic Darlington Complementary Silicon Power Transistors

文件:85.81 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Plastic Darlington Complementary Silicon Power Transistors

文件:133.15 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Plastic Darlington Complementary Silicon Power Transistors

文件:85.81 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Plastic Darlington Complementary Silicon Power Transistors

文件:150.3 Kbytes Page:6 Pages

ONSEMI

安森美半导体

封装/外壳:TO-225AA,TO-126-3 包装:管件 描述:TRANS PNP DARL 60V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Plastic Darlington Complementary Silicon Power Transistors

文件:133.15 Kbytes Page:6 Pages

ONSEMI

安森美半导体

2N6035产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Polarity:

    PNP

  • IC Continuous (A):

    4

  • V(BR)CEO Min (V):

    60

  • VCE(sat) Max (V):

    2

  • hFE Min (k):

    0.75

  • hFE Max (k):

    15

  • fT Min (MHz):

    25

  • Package Type:

    TO-225-3

更新时间:2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO-225
1259
原厂订货渠道,支持BOM配单一站式服务
onsemi(安森美)
25+
TO-225-3
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
ON/安森美
25+
SMD
20000
原装
ON/安森美
21+
SMD
30000
百域芯优势 实单必成 可开13点增值税
ON/安森美
SMD
23+
6000
专业配单原装正品假一罚十
ON
24+
TO-225
8866
ON/安森美
22+
T0-126
20000
只做原装
MOTOROLA/摩托罗拉
CAN4
1676
专营铁帽CANCDIP
三年内
1983
只做原装正品
ON/安森美
23+
SMD
8000
只做原装现货

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