2N6035晶体管资料

  • 2N6035别名:2N6035三极管、2N6035晶体管、2N6035晶体三极管

  • 2N6035生产厂家:美国摩托罗拉半导体公司_美国国民半导体公司_德国电

  • 2N6035制作材料:Si-P+Darl+Di

  • 2N6035性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2N6035封装形式:直插封装

  • 2N6035极限工作电压:60V

  • 2N6035最大电流允许值:4A

  • 2N6035最大工作频率:<1MHZ或未知

  • 2N6035引脚数:3

  • 2N6035最大耗散功率:40W

  • 2N6035放大倍数:β>750

  • 2N6035图片代号:B-21

  • 2N6035vtest:60

  • 2N6035htest:999900

  • 2N6035atest:4

  • 2N6035wtest:40

  • 2N6035代换 2N6035用什么型号代替:BD262,BD676,BD678,BD778,

2N6035价格

参考价格:¥4.1913

型号:2N6035 品牌:Central 备注:这里有2N6035多少钱,2025年最近7天走势,今日出价,今日竞价,2N6035批发/采购报价,2N6035行情走势销售排行榜,2N6035报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N6035

MIDIUM POWER DAR;OMGTONS

DESCRIPTION The 2N6037, 2N6038 and 2N6039 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec To-126 plastic package. The complementary PNP types are the 2N6034, 2N6035 and 2N6036 respectively.

STMICROELECTRONICS

意法半导体

2N6035

Plastic Darlington Complementary Silicon Power Transistors

Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 in • Pb−Free Pa

ONSEMI

安森美半导体

2N6035

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N6037/6038/6039 • DARLINGTON • High DC current gain APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications

SAVANTIC

2N6035

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N6037/6038/6039 • DARLINGTON • High DC current gain APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications

ISC

无锡固电

2N6035

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER

Central

2N6035

SILICON POWER DARLINGTON TRANSISTORS

SILICON POWER DARLINGTON TRANSISTORS Designed for General -Purpose Amplifier & Low Speed Switching Applications.

CDIL

2N6035

COMPLEMENTARY SILICON DARLINGTON TRANSISTORS

DESCRIPTION: 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N6035

Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington

Central

2N6035

Trans Darlington PNP 60V 4A 3-Pin TO-126 Box

ETC

知名厂家

2N6035

4.0 A,60 V,PNP 达林顿双极功率晶体管

ONSEMI

安森美半导体

2N6035

Silicon PNP Power Transistors

文件:106.45 Kbytes Page:3 Pages

SAVANTIC

2N6035

Plastic Darlington Complementary Silicon Power Transistors

文件:133.15 Kbytes Page:6 Pages

ONSEMI

安森美半导体

2N6035

Plastic Darlington Complementary Silicon Power Transistors

文件:85.81 Kbytes Page:6 Pages

ONSEMI

安森美半导体

SILICON POWER DARLINGTON TRANSISTORS

SILICON POWER DARLINGTON TRANSISTORS Designed for General -Purpose Amplifier & Low Speed Switching Applications.

CDIL

Plastic Darlington Complementary Silicon Power Transistors

文件:85.81 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Plastic Darlington Complementary Silicon Power Transistors

文件:133.15 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Plastic Darlington Complementary Silicon Power Transistors

文件:85.81 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Plastic Darlington Complementary Silicon Power Transistors

文件:133.15 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Plastic Darlington Complementary Silicon Power Transistors

文件:150.3 Kbytes Page:6 Pages

ONSEMI

安森美半导体

封装/外壳:TO-225AA,TO-126-3 包装:管件 描述:TRANS PNP DARL 60V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

2N6035产品属性

  • 类型

    描述

  • 型号

    2N6035

  • 功能描述

    达林顿晶体管 PNP Pwr Darlington

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO-225
1259
原厂订货渠道,支持BOM配单一站式服务
ON/安森美
24+
NA/
900
优势代理渠道,原装正品,可全系列订货开增值税票
22+
TO126
100000
代理渠道/只做原装/可含税
ON/安森美
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
ON/安森美
21+
SMD
30000
百域芯优势 实单必成 可开13点增值税
sgs
25+
500000
行业低价,代理渠道
ON
24+
TO-225
8866
ON/安森美
SMD
23+
6000
专业配单原装正品假一罚十
MOTOROLA/摩托罗拉
CAN4
1676
专营铁帽CANCDIP
ON
23+
TO-126
11846
一级代理商现货批发,原装正品,假一罚十

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