POWER TRANSISTORS COMPLEMENTARY SILICON

High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage – VCEO(sus) = 140 Vdc • High DC Current Gain – @ IC = 8.0 Adc hFE = 15 (Min) • Low Collector–Emitte

PNP SILICON POWER TRANSISTOR 140 VOLTS, 200 WATTS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6031 is a 16 Ampere PNP Silicon Power Transistor designed for use in high power amplifiers and high voltage switching regulator circuits. MARKING: FULL PART NUMBER

Power Transistors

Power Transistors

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N5631 • High collector sustaining voltage • High DC current gain • Low collector saturation voltage APPLICATIONS • For high power audio amplifier and high voltage switching regulator circuits applications

POWER TRANSISTORSS PNP SILICON

HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100-120-140 VOLTS 200 WATTS

POWER TRANSISTORS COMPLEMENTARY SILICON

HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100-120-140 VOLTS 200 WATTS

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N5631 • High collector sustaining voltage • High DC current gain • Low collector saturation voltage APPLICATIONS • For high power audio amplifier and high voltage switching regulator circuits applications

200W PNP High Power BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Trans GP BJT PNP 140V 16A 3-Pin(2+Tab) TO-3

Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Silicon PNP Power Transistors

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封装/外壳：TO-204AA，TO-3 包装：卷带（TR） 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个