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2N59晶体管资料
2N59别名:2N59三极管、2N59晶体管、2N59晶体三极管
2N59生产厂家:CSR_美国电子晶体管公司_IDI
2N59制作材料:Ge-PNP
2N59性质:低频或音频放大 (LF)
2N59封装形式:直插封装
2N59极限工作电压:25V
2N59最大电流允许值:0.2A
2N59最大工作频率:<1MHZ或未知
2N59引脚数:3
2N59最大耗散功率:0.18W
2N59放大倍数:β=90
2N59图片代号:D-9
2N59vtest:25
2N59htest:999900
- 2N59atest:0.2
2N59wtest:0.18
2N59代换 2N59用什么型号代替:AC122,AC125,AC126,AC151,ASY26,ASY27,2N1191,2N1192,2N1193,2N1194,3AX53A,
2N59价格
参考价格:¥44.8394
型号:2N5912 品牌:National 备注:这里有2N59多少钱,2025年最近7天走势,今日出价,今日竞价,2N59批发/采购报价,2N59行情走势销售排行榜,2N59报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MONOLITHICDUALNCHANNELJFETGENERALPURPOSEAMPLIFIER 2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909 | Intersil Intersil Corporation | |||
P-CHANNELJFET GENERALINFORMATION/CROSSREFERENCES | Intersil Intersil Corporation | |||
MonolithicDualN-ChannelJFETGeneralPurposeAmplifier FEATURES •TightTracking •GoodMatching | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
P-CHANNELJFET GENERALINFORMATION/CROSSREFERENCES | Intersil Intersil Corporation | |||
MONOLITHICDUALNCHANNELJFETGENERALPURPOSEAMPLIFIER 2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909 | Intersil Intersil Corporation | |||
MONOLITHICDUALNCHANNELJFETGENERALPURPOSEAMPLIFIER 2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909 | Intersil Intersil Corporation | |||
P-CHANNELJFET GENERALINFORMATION/CROSSREFERENCES | Intersil Intersil Corporation | |||
MONOLITHICDUALNCHANNELJFETGENERALPURPOSEAMPLIFIER 2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909 | Intersil Intersil Corporation | |||
DUALN-CHANNELJFET FEATURES •TightTracking •GoodMatching | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
P-CHANNELJFET GENERALINFORMATION/CROSSREFERENCES | Intersil Intersil Corporation | |||
P-CHANNELJFET GENERALINFORMATION/CROSSREFERENCES | Intersil Intersil Corporation | |||
MONOLITHICDUALNCHANNELJFETGENERALPURPOSEAMPLIFIER 2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909 | Intersil Intersil Corporation | |||
MONOLITHICDUALNCHANNELJFETGENERALPURPOSEAMPLIFIER 2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909 | Intersil Intersil Corporation | |||
P-CHANNELJFET GENERALINFORMATION/CROSSREFERENCES | Intersil Intersil Corporation | |||
P-CHANNELJFET GENERALINFORMATION/CROSSREFERENCES | Intersil Intersil Corporation | |||
MONOLITHICDUALNCHANNELJFETGENERALPURPOSEAMPLIFIER 2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909 | Intersil Intersil Corporation | |||
LOWNOISE,LOWDRIFTMONOLITHICDUALN-CHANNELJFET The2N5908isahigh-performancemonolithicdualJFETfeaturingtightmatchingandlowdriftovertemperaturespecifications,andistargetedforuseinawiderangeofprecisioninstrumentationapplicationswheretighttrackingisrequired. ThehermeticallysealedTO-78packageiswellsuitedfo | MICROSS Micross Components | |||
LOWNOISE,LOWDRIFTMONOLITHICDUALN-CHANNELJFET The2N5908isahigh-performancemonolithicdualJFETfeaturingtightmatchingandlowdriftovertemperaturespecifications,andistargetedforuseinawiderangeofprecisioninstrumentationapplicationswheretighttrackingisrequired. ThehermeticallysealedTO-78packageiswellsuitedfo | MICROSS Micross Components | |||
MONOLITHICDUALNCHANNELJFETGENERALPURPOSEAMPLIFIER 2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909 | Intersil Intersil Corporation | |||
P-CHANNELJFET GENERALINFORMATION/CROSSREFERENCES | Intersil Intersil Corporation | |||
PMPSILICONSWITCHINGTRANSISTORS SmallSignalTransistorsTO-92Case(Continued) | CentralCentral Semiconductor Corp 美国中央半导体 | |||
PNPULTRAHIGHSPEEDSATURATEDLOGICSWITCHES DIFFUSEDSILICONPLANAREPITAXIALTRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
DualN-ChannelSiliconJunctionField-EffectTransistor DualN-ChannelSiliconJunctionField-EffectTransistor ●WidebandDifferentialAmplifiers | InterFET InterFET Corporation | |||
DualN-ChannelJFETHighFrequencyAmplifier FEATURES •TightTracking •LowInsertionLoss •GoodMatching | Calogic Calogic, LLC | |||
P-CHANNELJFET GENERALINFORMATION/CROSSREFERENCES | Intersil Intersil Corporation | |||
DIFFETENTIALPAIRSN-CHANNELSILICONJUNCTIONFIELD-EFFECTTRANSISTORS DIFFETENTIALPAIRSN-CHANNELSILICONJUNCTIONFIELD-EFFECTTRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
DualN-ChannelJFETHighFrequencyAmplifier FEATURES •TightTracking •LowInsertionLoss •GoodMatching | Calogic Calogic, LLC | |||
DualN-ChannelJFETHighFrequencyAmplifier FEATURES •TightTracking •LowInsertionLoss •GoodMatching | Calogic Calogic, LLC | |||
P-CHANNELJFET GENERALINFORMATION/CROSSREFERENCES | Intersil Intersil Corporation | |||
DualN-ChannelSiliconJunctionField-EffectTransistor DualN-ChannelSiliconJunctionField-EffectTransistor ●WidebandDifferentialAmplifiers | InterFET InterFET Corporation | |||
LinearSystemsreplacesdiscontinuedSiliconix&National LinearSystemsreplacesdiscontinuedSiliconix&National2N5912 The2N5912aremonolithicdualJFETs.Themonolithicdualchipdesignreducesparasiticsandgivesbetterperformanceatveryhighfrequencieswhileensuringextremelytightmatching.Thesedevicesareanexcellentchoiceforus | MICROSS Micross Components | |||
DIFFETENTIALPAIRSN-CHANNELSILICONJUNCTIONFIELD-EFFECTTRANSISTORS DIFFETENTIALPAIRSN-CHANNELSILICONJUNCTIONFIELD-EFFECTTRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
High-PowerSiliconN-P-NOverlayTransistors Feafures: Lowinductanceradialieads~particutariyusefuliforstrip-iinecircuits sHermeticallysealedceramic-metalpackage Electricallyisolatedmountingstud e6wattsminimumoutputfrom2N5915amplifierat470MHz e7-dBgainfrom2N5914driverat470MHz | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
High-PowerSiliconN-P-NOverlayTransistors Feafures: Lowinductanceradialieads~particutariyusefuliforstrip-iinecircuits sHermeticallysealedceramic-metalpackage Electricallyisolatedmountingstud e6wattsminimumoutputfrom2N5915amplifierat470MHz e7-dBgainfrom2N5914driverat470MHz | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SILICONNPNTRANSISTOR SILICONNPNTRANSISTOR150AMPERES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
iscSiliconNPNPowerTransistors DESCRIPTION ·DCCurrentGain- :hFE=20-100@IC=10A ·LowCollectorSaturationVoltage- :VCE(sat)=1.0V(Max)@IC=15A APPLICATIONS ·Designedforgeneralpurposepoweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
BIDIRECTIONALTRANSISTOR BidirectionalTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
iscSiliconNPNPowerTransistors DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=10A •LowCollectorSaturationVoltage-:VCE(sat)=1.0V(Max)@IC=15A APPLICATIONS •Designedforgeneralpurposepoweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=10A •LowCollectorSaturationVoltage-:VCE(sat)=1.0V(Max)@IC=15A APPLICATIONS •Designedforgeneralpurposepoweramplifierandswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=10A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforgeneralpurposepoweramplifierandswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
iscSiliconNPNPowerTransistors DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=10A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforgeneralpurposepoweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNPowerTransistors DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=20A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforgeneralpurposepoweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=20A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforgeneralpurposepoweramplifierandswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=20A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforgeneralpurposepoweramplifierandswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
iscSiliconNPNPowerTransistors DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=20A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforgeneralpurposepoweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNPowerTransistors DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=30A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforuseinpowerswitchingcircuits,audioamplifiers,seriesandshunt-regulators,driverandoutputstages,DC-DCconverters,inverters,andsolenoid | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •DCCurrentGain-:hFE=20-100@lc=30A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@lc=20A APPLICATIONS •Designedforuseinpowerswitchingcircuits,audioamplifiers,seriesandshunt-regulators,driverandoutputstages,DC-DCconverters,inverters,andsolenoid/r | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=30A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforuseinpowerswitchingcircuits,audioamplifiers,seriesandshunt-regulators,driverandoutputstages,DC-DCconverters,inverters,andsolenoid | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
iscSiliconNPNPowerTransistors DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=30A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforuseinpowerswitchingcircuits,audioamplifiers,seriesandshunt-regulators,driverandoutputstages,DC-DCconverters,inverters,andsolenoid | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNSILICONHIGH-FREQUENCY 1.2GHz-50mAdc NPNSILICONHIGH-FREQUENCYTRANSISOTR NPNSILICON | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
NPNSILICONHIGHFREQUENCYTRANSISTOR DESCRIPTION: The2N5943isaHighFrequencyTransistorforGeneralPurposeAmplifierApplications. | ASI Advanced Semiconductor | |||
RF&MICROWAVETRANSISTORS
| MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
RF&MIROWAVETRANSISTORS 2.0,4.0,10W-470MHzRFPOWERTRANSISTORSNPNSILICON | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
NPNSILICONRFPOWERTRANSISTOR 2.0,4.0,10W-470MHzRFPOWERTRANSISTORSNPNSILICON | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
RFPOWERTRANSISTORS 2.0,4.0,10W-470MHzRFPOWERTRANSISTORSNPNSILICON | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
N-CHANNELJFETS N-ChannelJFETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
N-ChannelJFETs [TAITRON] P-ChannelPowerMOSFETs N-ChannelJFETs N-ChannelMetalCanJFETs | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
SFETRF,VHF,UHF,Amplitiers N-ChannelRFAmplifier •ThisdeviceisdesignedforRFamplifierandmixerapplications operatingupto450MHz,andforanalogswitchingrequiringlow capacitance. •Sourcedfromprocess50. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
SFETRF,VHF,UHF,Amplitiers N-ChannelRFAmplifier •ThisdeviceisdesignedforRFamplifierandmixerapplications operatingupto450MHz,andforanalogswitchingrequiringlow capacitance. •Sourcedfromprocess50. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-ChannelJFETs [TAITRON] P-ChannelPowerMOSFETs N-ChannelJFETs N-ChannelMetalCanJFETs | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |
2N59产品属性
- 类型
描述
- 型号
2N59
- 功能描述
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 7A I(C) | TO-66
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
原厂 |
2020+ |
2438 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
FAIRCHILD/仙童 |
24+ |
NA/ |
1000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
国产 |
25+ |
TO-92 |
56468 |
百分百原装现货 实单必成 |
|||
FSC/ON |
23+ |
原包装原封 □□ |
2438 |
原装进口特价供应 QQ 1304306553 更多详细咨询 库存 |
|||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
仙童 |
24+ |
TO-92 |
5000 |
||||
onsemi(安森美) |
24+ |
TO-92-3 |
9203 |
支持大陆交货,美金交易。原装现货库存。 |
|||
TI |
新 |
1415 |
全新原装 货期两周 |
||||
CentralSemi |
1716+ |
TO72 |
8660 |
只做原装进口,假一罚十 |
|||
Fairchild/ON |
22+ |
TO923 |
9000 |
原厂渠道,现货配单 |
2N59规格书下载地址
2N59参数引脚图相关
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- 3q1
- 3g汽车
- 3579
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- 2sc4226
- 2N5932
- 2N5931
- 2N5930
- 2N593
- 2N5929
- 2N5928
- 2N5926
- 2N5925
- 2N5924
- 2N5923
- 2N5922
- 2N5921
- 2N5920
- 2N592
- 2N5919(A)
- 2N5918
- 2N5917
- 2N5916
- 2N5915
- 2N5914
- 2N5913
- 2N5912C
- 2N5912
- 2N5911
- 2N5910
- 2N591(/5)
- 2N591
- 2N5909
- 2N5908
- 2N5907
- 2N5906
- 2N5905
- 2N5904
- 2N5903
- 2N5902
- 2N5901
- 2N5900
- 2N5899
- 2N5898
- 2N5897
- 2N5896
- 2N5895
- 2N5894
- 2N5893
- 2N5892
- 2N5891
- 2N5890
- 2N589
- 2N5889
- 2N5888
- 2N5887
- 2N5886G
- 2N5886
- 2N5885G
- 2N5885
- 2N5884G
- 2N5884
- 2N5883G
- 2N5883
- 2N5882
- 2N5881
- 2N5880
- 2N5879
- 2N5878
- 2N5877
- 2N5876
- 2N5875
- 2N5874
- 2N5873
- 2N5872
- 2N5871
2N59数据表相关新闻
2N6027RLRAG坚持只做原装货
2N6027RLRAG坚持只做原装货
2024-9-192N5192G原包原标原装现货
2N5192G原包原标原装现货
2023-5-112N60G-TO220FT-A-TG_UTC代理商
2N60G-TO220FT-A-TG_UTC代理商
2023-3-72N5401L-SOT89R-B-TG_UTC代理商
2N5401L-SOT89R-B-TG_UTC代理商
2023-2-102N6043G
原装代理
2022-7-232N5245
2N5245,当天发货0755-82732291全新原装现货或门市自取.
2020-8-5
DdatasheetPDF页码索引
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