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2N59晶体管资料
2N59别名：2N59三极管、2N59晶体管、2N59晶体三极管
2N59生产厂家：CSR_美国电子晶体管公司_IDI
2N59制作材料：Ge-PNP
2N59性质：低频或音频放大 （LF）
2N59封装形式：直插封装
2N59极限工作电压：25V
2N59最大电流允许值：0.2A
2N59最大工作频率：<1MHZ或未知
2N59引脚数：3
2N59最大耗散功率：0.18W
2N59放大倍数：β=90
2N59图片代号：D-9
2N59vtest：25
2N59htest：999900
- 2N59atest：0.2
2N59wtest：0.18
2N59代换 2N59用什么型号代替：AC122,AC125,AC126,AC151,ASY26,ASY27,2N1191,2N1192,2N1193,2N1194,3AX53A,
2N59价格
参考价格：￥44.8394
型号：2N5912 品牌：National 备注：这里有2N59多少钱，2025年最近7天走势，今日出价，今日竞价，2N59批发/采购报价，2N59行情走势销售排行榜，2N59报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER 2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909 | Intersil |   | ||
P-CHANNEL JFET GENERAL INFORMATION/CROSS REFERENCES | Intersil | | ||
Monolithic Dual N-Channel JFET General Purpose Amplifier FEATURES • Tight Tracking • Good Matching | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
P-CHANNEL JFET GENERAL INFORMATION/CROSS REFERENCES | Intersil | | ||
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER 2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909 | Intersil | | ||
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER 2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909 | Intersil | | ||
P-CHANNEL JFET GENERAL INFORMATION/CROSS REFERENCES | Intersil | | ||
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER 2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909 | Intersil | | ||
DUAL N-CHANNEL JFET FEATURES • Tight Tracking • Good Matching | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
P-CHANNEL JFET GENERAL INFORMATION/CROSS REFERENCES | Intersil | | ||
P-CHANNEL JFET GENERAL INFORMATION/CROSS REFERENCES | Intersil | | ||
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER 2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909 | Intersil | | ||
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER 2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909 | Intersil | | ||
P-CHANNEL JFET GENERAL INFORMATION/CROSS REFERENCES | Intersil | | ||
P-CHANNEL JFET GENERAL INFORMATION/CROSS REFERENCES | Intersil | | ||
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER 2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909 | Intersil | | ||
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The 2N5908 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications where tight tracking is required. The hermetically sealed TO-78 package is well suited fo | MICROSS | | ||
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The 2N5908 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications where tight tracking is required. The hermetically sealed TO-78 package is well suited fo | MICROSS | | ||
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER 2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909 | Intersil | | ||
P-CHANNEL JFET GENERAL INFORMATION/CROSS REFERENCES | Intersil | | ||
PMP SILICON SWITCHING TRANSISTORS Small Signal Transistors TO-92 Case (Continued) | Central | | ||
PNP ULTRA HIGH SPEED SATURATED LOGIC SWITCHES DIFFUSED SILICON PLANAR EPITAXIAL TRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Dual N-Channel Silicon Junction Field-Effect Transistor Dual N-Channel Silicon Junction Field-Effect Transistor ● Wideband Differential Amplifiers | InterFET | | ||
Dual N-Channel JFET High Frequency Amplifier FEATURES • Tight Tracking • Low Insertion Loss • Good Matching | Calogic | | ||
P-CHANNEL JFET GENERAL INFORMATION/CROSS REFERENCES | Intersil | | ||
DIFFETENTIAL PAIRS N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS DIFFETENTIAL PAIRS N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Dual N-Channel JFET High Frequency Amplifier FEATURES • Tight Tracking • Low Insertion Loss • Good Matching | Calogic | | ||
Dual N-Channel JFET High Frequency Amplifier FEATURES • Tight Tracking • Low Insertion Loss • Good Matching | Calogic | | ||
P-CHANNEL JFET GENERAL INFORMATION/CROSS REFERENCES | Intersil | | ||
Dual N-Channel Silicon Junction Field-Effect Transistor Dual N-Channel Silicon Junction Field-Effect Transistor ● Wideband Differential Amplifiers | InterFET | | ||
Linear Systems replaces discontinued Siliconix & National Linear Systems replaces discontinued Siliconix & National 2N5912 The 2N5912 are monolithic dual JFETs. The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These devices are an excellent choice for us | MICROSS | | ||
DIFFETENTIAL PAIRS N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS DIFFETENTIAL PAIRS N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
High-Power Silicon N-P-N Overlay Transistors Feafures: Low inductance radial ieads ~ particutariy usefuli for strip-iine circuits s Hermetically sealed ceramic-metal package Electrically isolated mounting stud e6 watts minimum output from 2N5915 amplifier at 470 MHz e7-dB gain from 2N5914 driver at 470 MHz | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
High-Power Silicon N-P-N Overlay Transistors Feafures: Low inductance radial ieads ~ particutariy usefuli for strip-iine circuits s Hermetically sealed ceramic-metal package Electrically isolated mounting stud e6 watts minimum output from 2N5915 amplifier at 470 MHz e7-dB gain from 2N5914 driver at 470 MHz | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON NPN TRANSISTOR SILICON NPN TRANSISTOR 150 AMPERES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain- : hFE= 20-100@IC= 10A ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A APPLICATIONS ·Designed for general purpose power amplifier and switching applications. | ISC 无锡固电 | | ||
BIDIRECTIONAL TRANSISTOR Bidirectional Transistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 20-100@IC= 10A • Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A APPLICATIONS • Designed for general purpose power amplifier and switching applications. | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 20-100@IC= 10A • Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A APPLICATIONS • Designed for general purpose power amplifier and switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 20-100@IC= 10A • Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A APPLICATIONS • Designed for general purpose power amplifier and switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 20-100@IC= 10A • Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A APPLICATIONS • Designed for general purpose power amplifier and switching applications. | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 20-100@IC= 20A • Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A APPLICATIONS • Designed for general purpose power amplifier and switching applications. | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 20-100@IC= 20A • Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A APPLICATIONS • Designed for general purpose power amplifier and switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 20-100@IC= 20A • Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A APPLICATIONS • Designed for general purpose power amplifier and switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 20-100@IC= 20A • Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A APPLICATIONS • Designed for general purpose power amplifier and switching applications. | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 20-100@lc=30A • Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ lc=20A APPLICATIONS • Designed for use in power switching circuits,audio amplifiers, series and shunt-regulators, driver and output stages,DC-DC converters, inverters, and solenoid /r | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 20-100@IC= 30A • Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A APPLICATIONS • Designed for use in power switching circuits,audio amplifiers, series and shunt-regulators, driver and output stages,DC-DC converters, inverters, and solenoid | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 20-100@IC= 30A • Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A APPLICATIONS • Designed for use in power switching circuits,audio amplifiers, series and shunt-regulators, driver and output stages,DC-DC converters, inverters, and solenoid | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 20-100@IC= 30A • Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A APPLICATIONS • Designed for use in power switching circuits,audio amplifiers, series and shunt-regulators, driver and output stages,DC-DC converters, inverters, and solenoid | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON HIGH-FREQUENCY 1.2 GHz - 50 mAdc NPN SILICON HIGH-FREQUENCY TRANSISOTR NPN SILICON | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5943is a High Frequency Transistor for General Purpose Amplifier Applications. | ASI | | ||
RF & MICROWAVE TRANSISTORS
| Microsemi 美高森美 | | ||
RF&MIROWAVE TRANSISTORS 2.0, 4.0, 10 W - 470 MHz RF POWER TRANSISTORS NPN SILICON | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON RF POWER TRANSISTOR 2.0, 4.0, 10 W - 470 MHz RF POWER TRANSISTORS NPN SILICON | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
RF POWER TRANSISTORS 2.0, 4.0, 10 W - 470 MHz RF POWER TRANSISTORS NPN SILICON | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-CHANNEL JFETS N-Channel JFETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel JFETs [TAITRON] P-Channel Power MOSFETs N-Channel JFETs N-Channel Metal Can JFETs | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SFET RF,VHF, UHF, Amplitiers N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. | Fairchild 仙童半导体 | | ||
SFET RF,VHF, UHF, Amplitiers N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. | Fairchild 仙童半导体 | | ||
N-Channel JFETs [TAITRON] P-Channel Power MOSFETs N-Channel JFETs N-Channel Metal Can JFETs | ETCList of Unclassifed Manufacturers 未分类制造商 | |
2N59产品属性
- 类型
描述
- 型号
2N59
- 功能描述
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 7A I(C) | TO-66
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-92-3 |
9203 |
支持大陆交货,美金交易。原装现货库存。 |
|||
FSC/ON |
23+ |
原包装原封 □□ |
2438 |
原装进口特价供应 特价，原装元器件供应，支持开发样品 更多详细咨询 库存 |
|||
原厂 |
25+ |
2438 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
FAIRCHILD/仙童 |
24+ |
TO-92 |
60000 |
||||
FAIRCHILD/仙童 |
24+ |
NA/ |
1000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
国产 |
25+ |
TO-92 |
56468 |
百分百原装现货 实单必成 |
|||
仙童 |
24+ |
TO-92 |
5000 |
||||
TI |
新 |
1415 |
全新原装 货期两周 |
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Fairchild/ON |
22+ |
TO923 |
9000 |
原厂渠道,现货配单 |
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CentralSemi |
1716+ |
TO72 |
8660 |
只做原装进口,假一罚十 |
2N59芯片相关品牌
2N59规格书下载地址
2N59参数引脚图相关
- 5000
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- 485接口
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- 3q1
- 3g汽车
- 3579
- 35001
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- 303c
- 2sc4226
- 2N5932
- 2N5931
- 2N5930
- 2N593
- 2N5929
- 2N5928
- 2N5926
- 2N5925
- 2N5924
- 2N5923
- 2N5922
- 2N5921
- 2N5920
- 2N592
- 2N5919(A)
- 2N5918
- 2N5917
- 2N5916
- 2N5915
- 2N5914
- 2N5913
- 2N5912C
- 2N5912
- 2N5911
- 2N5910
- 2N591(/5)
- 2N591
- 2N5909
- 2N5908
- 2N5907
- 2N5906
- 2N5905
- 2N5904
- 2N5903
- 2N5902
- 2N5901
- 2N5900
- 2N5899
- 2N5898
- 2N5897
- 2N5896
- 2N5895
- 2N5894
- 2N5893
- 2N5892
- 2N5891
- 2N5890
- 2N589
- 2N5889
- 2N5888
- 2N5887
- 2N5886G
- 2N5886
- 2N5885G
- 2N5885
- 2N5884G
- 2N5884
- 2N5883G
- 2N5883
- 2N5882
- 2N5881
- 2N5880
- 2N5879
- 2N5878
- 2N5877
- 2N5876
- 2N5875
- 2N5874
- 2N5873
- 2N5872
- 2N5871
2N59数据表相关新闻
2N6027RLRAG坚持只做原装货
2N6027RLRAG坚持只做原装货
2024-9-192N5192G原包原标原装现货
2N5192G原包原标原装现货
2023-5-112N60G-TO220FT-A-TG_UTC代理商
2N60G-TO220FT-A-TG_UTC代理商
2023-3-72N5401L-SOT89R-B-TG_UTC代理商
2N5401L-SOT89R-B-TG_UTC代理商
2023-2-102N6043G
原装代理
2022-7-232N5245
2N5245，当天发货0755-82732291全新原装现货或门市自取.
2020-8-5
DdatasheetPDF页码索引
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