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2N5551TF价格

参考价格:¥0.1455

型号:2N5551TF 品牌:Fairchild Semiconductor 备注:这里有2N5551TF多少钱,2026年最近7天走势,今日出价,今日竞价,2N5551TF批发/采购报价,2N5551TF行情走势销售排行榜,2N5551TF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N5551TF

丝印代码:5551;NPN General-Purpose Amplifier

Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers.

ONSEMI

安森美半导体

2N5551TF

FAIRCHILD Small Signal Transistors

文件:628.43 Kbytes Page:1 Pages

FAIRCHILD

仙童半导体

2N5551TF

NPN General-Purpose Amplifier

文件:216.64 Kbytes Page:9 Pages

FAIRCHILD

仙童半导体

2N5551TF

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 160V 0.6A TO92-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

丝印代码:5551;NPN General-Purpose Amplifier

Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers.

ONSEMI

安森美半导体

NPN General-Purpose Amplifier

文件:216.64 Kbytes Page:9 Pages

FAIRCHILD

仙童半导体

FAIRCHILD Small Signal Transistors

文件:628.43 Kbytes Page:1 Pages

FAIRCHILD

仙童半导体

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 160V 0.6A TO92-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA Low Noise : NF=8dB (Max.)

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications????

NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications.

SEMTECH

先之科

NPN General Purpose Amplifier

Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers.

FAIRCHILD

仙童半导体

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V • Low Leakage Current. : ICBO=50nA(Max.), VCB=120V • Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA • Low Noise : NF=8dB (Max.)

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

NPN EPITAXIAL PLANAR TRANSISTOR

Description The H2N5551 is designed for amplifier transistor. Features • Complements to PNP Type H2N5401 • High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))

HSMC

华昕

2N5551TF产品属性

  • 类型

    描述

  • 型号

    2N5551TF

  • 功能描述

    两极晶体管 - BJT NPN Transistor General Purpose

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2026-5-18 10:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Fairchild(飞兆/仙童)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
FAIRCHILDONSEMICONDUCTOR
21+
NA
279473
只做原装,一定有货,不止网上数量,量多可订货!
ON
24+
SMD
150000
全新正品现货供应特价库存
ON/安森美
2021+
TO-92-3L
7600
原装现货,欢迎询价
onsemi(安森美)
24+
TO-92-3
2317
原厂订货渠道,支持BOM配单一站式服务
ON/安森美
NA
275000
一级代理原装正品,价格优势,长期供应!
ON/安森美
25+
SMD
20000
原装
ON/安森美
21+
TO-92-3L
8080
只做原装,质量保证
26+
N/A
54000
一级代理-主营优势-实惠价格-不悔选择
ON
25+
原装优势现货
8000
原装优势现货

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