EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V • Low Leakage Current. : ICBO=50nA(Max.), VCB=120V • Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA • Low Noise : NF=8dB (Max.)

TO-92 PACKAGE

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GENERAL PURPOSE TRANSISTORS

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General Purpose Transistor, TO-92, 160V, 0.6A

NPN Silicon Transistor

Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.)

HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A

FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) • CECC SCREENING OPTIONS APPLICATIONS: Hermetically sealed surface mount 2N5551 for high reliability / space applications requiring small size and low weight devices.

TO-92 PACKAGE

文件：30.23 Kbytes Page：1 Pages

EPITAXIAL PLANAR NPN TRANSISTOR

文件：37.94 Kbytes Page：2 Pages

NPN Silicon Transistor

Bipolar Junction Transistors

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 160V 0.6A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 160V 0.6A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA Low Noise : NF=8dB (Max.)

NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications????

NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications.

NPN General Purpose Amplifier

Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers.

NPN EPITAXIAL PLANAR TRANSISTOR

Description The H2N5551 is designed for amplifier transistor. Features • Complements to PNP Type H2N5401 • High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))