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位置：首页 > IC中文资料第34页 > 2N5551

2N5551晶体管资料

  • 2N5551别名：2N5551三极管、2N5551晶体管、2N5551晶体三极管

  • 2N5551生产厂家：美国摩托罗拉半导体公司_美国国民半导体公司_美国得

  • 2N5551制作材料：Si-NPN

  • 2N5551性质：视频输出 （Vid）

  • 2N5551封装形式：直插封装

  • 2N5551极限工作电压：180V

  • 2N5551最大电流允许值：0.6A

  • 2N5551最大工作频率：>100MHZ

  • 2N5551引脚数：3

  • 2N5551最大耗散功率：0.625W

  • 2N5551放大倍数：

  • 2N5551图片代号：A-31

  • 2N5551vtest：180

  • 2N5551htest：100000100

  • 2N5551atest：.6

  • 2N5551wtest：.625

  • 2N5551代换 2N5551用什么型号代替：BF391,BF392,BF393,BFP22,BSS48,HY5551,MPS-A42,MPS-A43,2N3440,3DA87C,3DG84G,

2N5551价格

参考价格：￥0.0995

型号：2N5551 品牌：MULTICOMP 备注：这里有2N5551多少钱，2024年最近7天走势，今日出价，今日竞价，2N5551批发/采购报价，2N5551行情走势销售排行榜，2N5551报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N5551

NPNSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications????

NPNSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications.

SEMTECH

Semtech Corporation

SEMTECH
2N5551

NPNGeneralPurposeAmplifier

Description Thisdeviceisdesignedforgeneral-purposehigh-voltageamplifiersandgasdischargedisplaydrivers.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N5551

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,HIGHVOLTAGE)

GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES HighCollectorBreakdwonVoltage :VCBO=180V,VCEO=160V LowLeakageCurrent. :ICBO=50nA(Max.),VCB=120V LowSaturationVoltage :VCE(sat)=0.2V(Max.),IC=50mA,IB=5mA LowNoise:NF=8dB(Max.)

KECKEC CORPORATION

KEC株式会社

KEC
2N5551

COMPLEMENTARYSILICONGENERALPURPOSEHIGHVOLTAGETRANSISTORS

2N5400,2N5401-->PNP 2N5550,2N5551-->NPN

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS
2N5551

SmallSignalTransistorsTO-92Case(Continued)

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N4400and2N4401aresiliconNPNtransistorsdesignedforgeneralpurposeamplifierandswitchingapplications.PNPcomplementarytypesare2N4402and2N4403. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central
2N5551

AmplifierTransistors

AmplifierTransistors NPNSilicon

MotorolaMotorola, Inc

摩托罗拉

Motorola
2N5551

NPNTransistors

NPNTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
2N5551

NPNGeneralPurposeAmplifier

FEATURES&USE ★HighCollectorBreakdownVoltage;LowNoise; ★Complementaryto2N5401 ★Thisdeviceisdesignedasageneralpurposeamplifierandswitchforapplicationsrequiringhighvoltages.

AVICTEKAvic Technology

Avic Technology

AVICTEK
2N5551

GeneralPurposeSi-EpitaxialPlanarTransistors

•Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

DiotecDIOTEC

德欧泰克

Diotec
2N5551

mplifierTransistors(NPNSilicon)

AmplifierTransistors NPNSilicon Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N5551

NPNSiliconGeneralPurposeTransistor

FEATURES *Switchingandamplificationinhighvoltage *Lowcurrent(max.600mA) *Highvoltage(max.180v)

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2N5551

TO-92Plastic-EncapsulateTransistors

Features •Pb−FreePackagesareAvailable* •DeviceMarking:DeviceType,e.g.,2N5550,DateCode

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

DAYA
2N5551

NPNGeneralPurposeAmplifierTransistor

Features •Thisdeviceisdesignedforgeneralpurposehighvoltageamplifiersandgasdischargedisplaydrivers. •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLrating1 •Marking:Typenumber •LeadFreeFinish/RohsCompliant(PSuffixdesignatesCo

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2N5551

AmplifierTransistors

Features •Pb−FreePackagesareAvailable* •DeviceMarking:DeviceType,e.g.,2N5550,DateCode

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

DAYA
2N5551

NPNEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR

NPNEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR HighVoltageNPNTransistorForGeneralPurposeAndTelephonyApplications.

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca
2N5551

NPNSiliconTransistor(GeneralpurposeamplifierHighvoltageapplication)

Descriptions •Generalpurposeamplifier •Highvoltageapplication Features •Highcollectorbreakdownvoltage:VCBO=180V,VCEO=160V •Lowcollectorsaturationvoltage:VCE(sat)=0.5V(MAX.) •Complementarypairwith2N5401

AUK

AUK

AUK
2N5551

TO-92Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.6A Collector-basevoltage V(BR)CBO:180V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
2N5551

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N5551

SmallSignalHighVoltageTransistor(NPN)

Features •HighVoltageNPNTransistorforGeneralPurposeand TelephonyApplications

TAITRON

TAITRON

TAITRON
2N5551

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeamplifierapplications.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
2N5551

NPNSiliconTransistor

Descriptions •Generalpurposeamplifier •Highvoltageapplication Features •Highcollectorbreakdownvoltage: VCBO=180V,VCEO=160V •Lowcollectorsaturationvoltage: VCE(sat)=0.5V(MAX.) •Complementarypairwith2N5401

KODENSHIKodenshi Group

可天士可天士光电子集团

KODENSHI
2N5551

NPNEPITAXIALPLANARTRANSISTOR

Description The2N5551isdesignedforamplifiertransistor. Features •ComplementstoPNPType2N5401. •HighCollector-EmitterBreakdownVoltage.VCEO>160V(@IC=1mA)

TGS

Tiger Electronic Co.,Ltd

TGS
2N5551

SERIES2NTRANSISTORS

SERIES2NTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5551

NPNhigh-voltagetransistor

DESCRIPTION •NPNhigh-voltagetransistor •Lowcurrent(max.300mA) •Highvoltage(max.160V) •Complementsto2N5401. APPLICATIONS •DesignedforSwitchingandamplification inhighvoltageapplications,suchastelephony applications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2N5551

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ●GeneralPurposeSwitchingApplication

FS

First Silicon Co., Ltd

FS
2N5551

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) Features ●GeneralPurposeSwitchingApplication

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI
2N5551

NPNSMALLSIGNALHIGHVOLTAGEGENERALPURPOSEAMPLIFIER

SERIES2NTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5551

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●GeneralPurposeSwitchingApplication

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2N5551

GeneralPurposeSwitchingApplication

NPNSiliconEpitaxialPlanarTransistorsforgeneralpurpose,highvoltageamplifierapplications. AscomplementarytypesthePNPtransistorsST2N5400andST2N5401arerecommended. Onspecialrequest,thesetransistorscanbemanufacturedindifferentpinconfigurations.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2N5551

NPNTransistors

Features ●Switchingandamplificationinhighvoltage ●Applicationssuchastelephony ●Lowcurrent(max.600mA) ●Highvoltage(max.180V)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2N5551

NPNTransistorBareDie

Generalpurposehighvoltageamplifierorswitchinbaredieform Features HighCollectorBreakdownVoltage LowCollectorSaturationVoltage Characterizedattemperatureextremes HighReliabilityGoldBackMetal HighReliabilitytestedgradesforMilitary+Space

SS

Silicon Supplies

SS
2N5551

NPNhigh-voltagetransistors

FEATURES ·Lowcurrent(max.300mA) ·Highvoltage(max.160V). APPLICATIONS ·Switchingandamplificationinhighvoltageapplications suchastelephony. DESCRIPTION NPNhigh-voltagetransistorinaTO-92;SOT54plastic package.PNPcomplements:2N5400and2N5401.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
2N5551

TO-92Plastic-EncapsulateTransistors

Features GeneralPurposeSwitchingApplication

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2N5551

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 160V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N5551

iscSiliconNPNPowerTransistor

文件：353.01 Kbytes Page：3 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2N5551

HIGHVOLTAGESWITCHINGTRANSISTOR

文件：175.72 Kbytes Page：4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N5551

HIGHVOLTAGESWITCHINGTRANSISTOR

文件：215.7 Kbytes Page：3 Pages

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

BWTECH
2N5551

Generalpurposeamplifier

文件：223.41 Kbytes Page：5 Pages

KODENSHIKodenshi Group

可天士可天士光电子集团

KODENSHI
2N5551

Plastic-EncapsulateTransistors

文件：185.38 Kbytes Page：2 Pages

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
2N5551

SiliconNPNtransistorinaTO-92PlasticPackage

文件：765.28 Kbytes Page：6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2N5551

GeneralPurposeNPNTransistors

文件：141.01 Kbytes Page：2 Pages

DiotecDIOTEC

德欧泰克

Diotec
2N5551

TRANSISTOR(NPN)

文件：295.33 Kbytes Page：2 Pages

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
2N5551

TRANSISTOR(NPN)

文件：133.07 Kbytes Page：1 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2N5551

NPNEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR

文件：284.91 Kbytes Page：3 Pages

CDIL

CDIL

CDIL
2N5551

AmplifierTransistors

文件：71.63 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N5551

TO-92PACKAGE

文件：30.35 Kbytes Page：1 Pages

KECKEC CORPORATION

KEC株式会社

KEC
2N5551_V01

TO-92Plastic-EncapsulateTransistors

Features GeneralPurposeSwitchingApplication

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2N5551-A-AB3-B

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N5551-A-AB3-K

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N5551-A-AB3-R

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N5551-A-T92-B

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N5551-A-T92-K

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N5551-A-T92-R

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N5551-B-AB3-B

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N5551-B-AB3-K

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N5551-B-AB3-R

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N5551-B-T92-B

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N5551-B-T92-K

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N5551-B-T92-R

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N5551BU

NPNGeneral-PurposeAmplifier

Description Thisdeviceisdesignedforgeneral-purposehigh-voltageamplifiersandgasdischargedisplaydrivers.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

2N5551产品属性

  • 类型

    描述

  • 型号

    2N5551

  • 功能描述

    两极晶体管 - BJT NPN Gen Pur SS

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

2N5551供应商更多...

更新时间：2024-4-25 18:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市弘扬芯城科技有限公司
2N5551L-B-T92-K
UTC(友顺)
24+
TO-92-3
5000
诚信服务,绝对原装原盘。
询价
千层芯半导体(深圳)有限公司
2N5551
FSC
17+
TO-92
626
全新原装环保
询价
深圳市永贝尔科技有限公司
2N5551
CJ(江苏长电/长晶)
2023+
N/A
4550
全新原装正品
询价
深圳市明嘉莱科技有限公司
2N5551BU
ON/安森美
24+
SMD
860000
明嘉莱只做原装正品现货
询价
深圳市卓越微芯电子有限公司
2N5551
科威
2020+
TO-92
40000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳市高捷芯城科技有限公司
2N5551BU
onsemi(安森美)
23+
TO-92-3
1612
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市莱克讯科技有限公司
2N5551
ON
2017+
TO-92
65895
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
深圳市弘为电子有限公司
2N5551
ON
16+
SOT23
1068
原装现货假一罚十
询价
深圳硅原半导体有限公司
2N5551
CJ/长电
TO92
25201
诚心经营 原盒原标 正品现货 价格美丽假一罚十
询价
深圳好佳好科技有限公司
2N5551
FSC
1436+
TO-92
30000
绝对原装进口现货可开17%增值税发票
询价

2N5551芯片相关品牌

  • ABRACON
  • AD
  • HAMMOND
  • ICST
  • MOLEX7
  • Motorola
  • NIC
  • Sipex
  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

2N5551规格书下载地址

2N5551参数引脚图相关

2N5551数据表相关新闻

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