NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications????

NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications.

NPN General Purpose Amplifier

Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers.

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA Low Noise : NF=8dB (Max.)

COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS

2N5400,2N5401 --> PNP 2N5550,2N5551 --> NPN

Small Signal Transistors TO-92 Case (Continued)

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4400 and 2N4401 are silicon NPN transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N4402 and 2N4403. MARKING: FULL PART NUMBER

Amplifier Transistors

Amplifier Transistors NPN Silicon

NPN Transistors

NPN Transistors P/b Lead(Pb)-Free

NPN General Purpose Amplifier

FEATURES & USE ★ High Collector Breakdown Voltage; Low Noise; ★ Complementary to 2N5401 ★ This device is designed as a general purpose amplifier and switch for applications requiring high voltages.

General Purpose Si-Epitaxial Planar Transistors

• Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

mplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

NPN Silicon General Purpose Transistor

FEATURES * Switching and amplification in high voltage * Low current(max. 600mA) * High voltage(max.180v)

TO-92 Plastic-Encapsulate Transistors

Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code

NPN General Purpose Amplifier Transistor

Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL rating 1 • Marking:Type number • Lead Free Finish/Rohs Compliant (PSuffix designates Co

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR( NPN ) Features ● General Purpose Switching Application

NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR

NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR High Voltage NPN Transistor For General Purpose And Telephony Applications.

NPN Silicon Transistor (General purpose amplifier High voltage application)

Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with 2N5401

TO-92 Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO : 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Amplifier Transistors

Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code

HIGH VOLTAGE SWITCHING TRANSISTOR

FEATURES * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier

NPN Silicon Transistor

Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with 2N5401

NPN EPITAXIAL PLANAR TRANSISTOR

Description The 2N5551 is designed for amplifier transistor. Features • Complements to PNP Type 2N5401. • High Collector-Emitter Breakdown Voltage. VCEO>160V (@IC=1mA)

Small Signal High Voltage Transistor (NPN)

Features • High Voltage NPN Transistor for General Purpose and Telephony Applications

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for general purpose amplifier applications.

SERIES 2N TRANSISTORS

SERIES 2N TRANSISTORS

NPN high-voltage transistor

DESCRIPTION • NPN high-voltage transistor • Low current (max. 300 mA) • High voltage (max. 160 V) • Complements to 2N5401. APPLICATIONS • Designed for Switching and amplification in high voltage applications , such as telephony applications.

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● General Purpose Switching Application

NPN SMALL SIGNAL HIGH VOLTAGE GENERAL PURPOSE AMPLIFIER

SERIES 2N TRANSISTORS

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● General Purpose Switching Application

General Purpose Switching Application

NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations.

NPN Transistors

Features ● Switching and amplification in high voltage ● Applications such as telephony ● Low current(max. 600mA) ● High voltage(max.180V)

NPN Transistor Bare Die

General purpose high voltage amplifier or switch in bare die form Features High Collector Breakdown Voltage Low Collector Saturation Voltage Charac terized at temperature extremes High R eliability Gold Back Metal High Reliability tested grades for Military + Space

NPN high-voltage transistors

TO-92 Plastic-Encapsulate Transistors

Features General Purpose Switching Application

NPN General-Purpose Amplifier

Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers.

Bipolar Transistor

Description Transistor, NPN, 0.6A, 160V, TO-92

GENERAL PURPOSE TRANSISTORS

文件：707.49 Kbytes Page：6 Pages

isc Silicon NPN Power Transistor

文件：353.01 Kbytes Page：3 Pages

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 160V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar Transistor

中等功率双极型晶体管

晶体管

HIGH VOLTAGE SWITCHING TRANSISTOR

文件：215.7 Kbytes Page：3 Pages

General purpose amplifier

文件：223.41 Kbytes Page：5 Pages

HIGH VOLTAGE SWITCHING TRANSISTOR

文件：175.72 Kbytes Page：4 Pages

Plastic-Encapsulate Transistors

文件：185.38 Kbytes Page：2 Pages

Silicon NPN transistor in a TO-92 Plastic Package

文件：765.28 Kbytes Page：6 Pages

General Purpose NPN Transistors

文件：141.01 Kbytes Page：2 Pages

TRANSISTOR (NPN)

文件：295.33 Kbytes Page：2 Pages

TRANSISTOR (NPN)

文件：133.07 Kbytes Page：1 Pages

NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR

文件：284.91 Kbytes Page：3 Pages

TO-92 PACKAGE

文件：30.35 Kbytes Page：1 Pages

Amplifier Transistors

文件：71.63 Kbytes Page：6 Pages

TO-92 Plastic-Encapsulate Transistors

Features General Purpose Switching Application

HIGH VOLTAGE SWITCHING TRANSISTOR

FEATURES * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier

HIGH VOLTAGE SWITCHING TRANSISTOR

FEATURES * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier

HIGH VOLTAGE SWITCHING TRANSISTOR

FEATURES * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier

HIGH VOLTAGE SWITCHING TRANSISTOR

FEATURES * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier

HIGH VOLTAGE SWITCHING TRANSISTOR

FEATURES * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier

HIGH VOLTAGE SWITCHING TRANSISTOR

FEATURES * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier

HIGH VOLTAGE SWITCHING TRANSISTOR

FEATURES * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier