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位置：首页 > IC中文资料第34页 > 2N5551

2N5551晶体管资料

  • 2N5551别名：2N5551三极管、2N5551晶体管、2N5551晶体三极管

  • 2N5551生产厂家：美国摩托罗拉半导体公司_美国国民半导体公司_美国得

  • 2N5551制作材料：Si-NPN

  • 2N5551性质：视频输出 （Vid）

  • 2N5551封装形式：直插封装

  • 2N5551极限工作电压：180V

  • 2N5551最大电流允许值：0.6A

  • 2N5551最大工作频率：>100MHZ

  • 2N5551引脚数：3

  • 2N5551最大耗散功率：0.625W

  • 2N5551放大倍数：

  • 2N5551图片代号：A-31

  • 2N5551vtest：180

  • 2N5551htest：100000100

  • 2N5551atest：0.6

  • 2N5551wtest：0.625

  • 2N5551代换 2N5551用什么型号代替：BF391,BF392,BF393,BFP22,BSS48,HY5551,MPS-A42,MPS-A43,2N3440,3DA87C,3DG84G,

2N5551价格

参考价格：￥0.0995

型号：2N5551 品牌：MULTICOMP 备注：这里有2N5551多少钱，2025年最近7天走势，今日出价，今日竞价，2N5551批发/采购报价，2N5551行情走势销售排行榜，2N5551报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N5551

NPNSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications????

NPNSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications.

SEMTECH

Semtech Corporation

SEMTECH
2N5551

NPNGeneralPurposeAmplifier

Description Thisdeviceisdesignedforgeneral-purposehigh-voltageamplifiersandgasdischargedisplaydrivers.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N5551

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,HIGHVOLTAGE)

GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES HighCollectorBreakdwonVoltage :VCBO=180V,VCEO=160V LowLeakageCurrent. :ICBO=50nA(Max.),VCB=120V LowSaturationVoltage :VCE(sat)=0.2V(Max.),IC=50mA,IB=5mA LowNoise:NF=8dB(Max.)

KECKEC CORPORATION

KEC株式会社

KEC
2N5551

COMPLEMENTARYSILICONGENERALPURPOSEHIGHVOLTAGETRANSISTORS

2N5400,2N5401-->PNP 2N5550,2N5551-->NPN

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS
2N5551

SmallSignalTransistorsTO-92Case(Continued)

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N4400and2N4401aresiliconNPNtransistorsdesignedforgeneralpurposeamplifierandswitchingapplications.PNPcomplementarytypesare2N4402and2N4403. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central
2N5551

AmplifierTransistors

AmplifierTransistors NPNSilicon

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola
2N5551

NPNTransistors

NPNTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

WEITRON
2N5551

NPNGeneralPurposeAmplifier

FEATURES&USE ★HighCollectorBreakdownVoltage;LowNoise; ★Complementaryto2N5401 ★Thisdeviceisdesignedasageneralpurposeamplifierandswitchforapplicationsrequiringhighvoltages.

AVICTEK

Avic Technology

AVICTEK
2N5551

GeneralPurposeSi-EpitaxialPlanarTransistors

•Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

Diotec

Diotec Semiconductor

Diotec
2N5551

mplifierTransistors(NPNSilicon)

AmplifierTransistors NPNSilicon Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N5551

NPNSiliconGeneralPurposeTransistor

FEATURES *Switchingandamplificationinhighvoltage *Lowcurrent(max.600mA) *Highvoltage(max.180v)

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2N5551

TO-92Plastic-EncapsulateTransistors

Features •Pb−FreePackagesareAvailable* •DeviceMarking:DeviceType,e.g.,2N5550,DateCode

DAYADaya Electric Group Co., Ltd.

大亚电器集团大亚电器集团有限公司

DAYA
2N5551

NPNGeneralPurposeAmplifierTransistor

Features •Thisdeviceisdesignedforgeneralpurposehighvoltageamplifiersandgasdischargedisplaydrivers. •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLrating1 •Marking:Typenumber •LeadFreeFinish/RohsCompliant(PSuffixdesignatesCo

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
2N5551

AmplifierTransistors

Features •Pb−FreePackagesareAvailable* •DeviceMarking:DeviceType,e.g.,2N5550,DateCode

DAYADaya Electric Group Co., Ltd.

大亚电器集团大亚电器集团有限公司

DAYA
2N5551

NPNEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR

NPNEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR HighVoltageNPNTransistorForGeneralPurposeAndTelephonyApplications.

bocaBoca Semiconductor Corporation

博卡博卡半导体公司

boca
2N5551

NPNSiliconTransistor(GeneralpurposeamplifierHighvoltageapplication)

Descriptions •Generalpurposeamplifier •Highvoltageapplication Features •Highcollectorbreakdownvoltage:VCBO=180V,VCEO=160V •Lowcollectorsaturationvoltage:VCE(sat)=0.5V(MAX.) •Complementarypairwith2N5401

AUK

AUK corp

AUK
2N5551

TO-92Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.6A Collector-basevoltage V(BR)CBO:180V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
2N5551

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N5551

SmallSignalHighVoltageTransistor(NPN)

Features •HighVoltageNPNTransistorforGeneralPurposeand TelephonyApplications

TAITRON

TAITRON Components Incorporated

TAITRON
2N5551

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeamplifierapplications.

DCCOM

Dc Components

DCCOM
2N5551

NPNSiliconTransistor

Descriptions •Generalpurposeamplifier •Highvoltageapplication Features •Highcollectorbreakdownvoltage: VCBO=180V,VCEO=160V •Lowcollectorsaturationvoltage: VCE(sat)=0.5V(MAX.) •Complementarypairwith2N5401

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI
2N5551

NPNEPITAXIALPLANARTRANSISTOR

Description The2N5551isdesignedforamplifiertransistor. Features •ComplementstoPNPType2N5401. •HighCollector-EmitterBreakdownVoltage.VCEO>160V(@IC=1mA)

TGS

Tiger Electronic Co.,Ltd

TGS
2N5551

NPNhigh-voltagetransistor

DESCRIPTION •NPNhigh-voltagetransistor •Lowcurrent(max.300mA) •Highvoltage(max.160V) •Complementsto2N5401. APPLICATIONS •DesignedforSwitchingandamplification inhighvoltageapplications,suchastelephony applications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2N5551

SERIES2NTRANSISTORS

SERIES2NTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5551

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ●GeneralPurposeSwitchingApplication

FS

First Silicon Co., Ltd

FS
2N5551

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) Features ●GeneralPurposeSwitchingApplication

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI
2N5551

NPNSMALLSIGNALHIGHVOLTAGEGENERALPURPOSEAMPLIFIER

SERIES2NTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5551

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●GeneralPurposeSwitchingApplication

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2N5551

GeneralPurposeSwitchingApplication

NPNSiliconEpitaxialPlanarTransistorsforgeneralpurpose,highvoltageamplifierapplications. AscomplementarytypesthePNPtransistorsST2N5400andST2N5401arerecommended. Onspecialrequest,thesetransistorscanbemanufacturedindifferentpinconfigurations.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2N5551

NPNTransistors

Features ●Switchingandamplificationinhighvoltage ●Applicationssuchastelephony ●Lowcurrent(max.600mA) ●Highvoltage(max.180V)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2N5551

NPNTransistorBareDie

Generalpurposehighvoltageamplifierorswitchinbaredieform Features HighCollectorBreakdownVoltage LowCollectorSaturationVoltage Characterizedattemperatureextremes HighReliabilityGoldBackMetal HighReliabilitytestedgradesforMilitary+Space

SS

Silicon Supplies

SS
2N5551

NPNhigh-voltagetransistors

ETC

知名厂家

2N5551

TO-92Plastic-EncapsulateTransistors

Features GeneralPurposeSwitchingApplication

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2N5551

iscSiliconNPNPowerTransistor

文件：353.01 Kbytes Page：3 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2N5551

GENERALPURPOSETRANSISTORS

文件：707.49 Kbytes Page：6 Pages

AITSEMIAiT Semiconductor Inc.

创瑞科技AiT创瑞科技

AITSEMI
2N5551

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 160V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N5551

HIGHVOLTAGESWITCHINGTRANSISTOR

文件：215.7 Kbytes Page：3 Pages

BWTECH

Bruckewell Technology LTD

BWTECH
2N5551

Generalpurposeamplifier

文件：223.41 Kbytes Page：5 Pages

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI
2N5551

TRANSISTOR(NPN)

文件：133.07 Kbytes Page：1 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2N5551

NPNEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR

文件：284.91 Kbytes Page：3 Pages

CDIL

Continental Device India Limited

CDIL
2N5551

Plastic-EncapsulateTransistors

文件：185.38 Kbytes Page：2 Pages

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

HOTTECH
2N5551

SiliconNPNtransistorinaTO-92PlasticPackage

文件：765.28 Kbytes Page：6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2N5551

GeneralPurposeNPNTransistors

文件：141.01 Kbytes Page：2 Pages

Diotec

Diotec Semiconductor

Diotec
2N5551

TRANSISTOR(NPN)

文件：295.33 Kbytes Page：2 Pages

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
2N5551

AmplifierTransistors

文件：71.63 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N5551

TO-92PACKAGE

文件：30.35 Kbytes Page：1 Pages

KECKEC CORPORATION

KEC株式会社

KEC
2N5551

HIGHVOLTAGESWITCHINGTRANSISTOR

文件：175.72 Kbytes Page：4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N5551_V01

TO-92Plastic-EncapsulateTransistors

Features GeneralPurposeSwitchingApplication

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2N5551-A-AB3-B

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N5551-A-AB3-K

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N5551-A-AB3-R

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N5551-A-T92-B

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N5551-A-T92-K

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N5551-A-T92-R

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N5551-B-AB3-B

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N5551-B-AB3-K

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N5551-B-AB3-R

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N5551-B-T92-B

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N5551-B-T92-K

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N5551-B-T92-R

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2N5551产品属性

  • 类型

    描述

  • 型号

    2N5551

  • 功能描述

    两极晶体管 - BJT NPN Gen Pur SS

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

2N5551供应商更多...

更新时间：2025-5-11 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
2N5551BU
onsemi(安森美)
24+
TO-92-3
1612
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市科恒伟业电子有限公司
2N5551BU
ON
24+
TO92
8500
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市汇莱威科技有限公司
2N5551B
长电
2024
to-92
13500
16余年资质 绝对原盒原盘代理渠道 更多数量
询价
深圳市得捷芯城科技有限公司
2N5551
CJ(江苏长电/长晶)
24+
N/A
7423
原厂可订货,技术支持,直接渠道。可签保供合同
询价
深圳市恒凯威科技开发有限公司
2N5551TA
ON
21+
TO-92
6880
只做原装,质量保证
询价
深圳市一线半导体有限公司
2N5551
KEC
24+
SOT-323
97490
新进库存/原装
询价
标准国际(香港)有限公司
2N5551
2015+
100
公司现货库存
询价
深圳兆威电子有限公司
2N5551
CJ/长电
22+
TO-92
711000
原装正品现货,可开13点税
询价
深圳市向鸿伟业电子有限公司
2N5551
SE
2410+
TO-92
80000
原装正品.假一赔百.正规渠道.原厂追溯.
询价
深圳市金嘉锐电子有限公司
2N5551S
KEC
2025+
SOT-23
32560
原装优势绝对有货
询价

2N5551芯片相关品牌

  • CAMDENBOSS
  • CHERRY
  • HOLTIC
  • ISSI
  • JAE
  • Micrel
  • PEAK
  • pulse
  • SEMTECH_ELEC
  • SPSEMI
  • UTC
  • YEASHIN

2N5551规格书下载地址

2N5551参数引脚图相关

2N5551数据表相关新闻

DdatasheetPDF页码索引

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