PNP Silicon Transistor

Description •General purpose amplifier •High voltage application Features •High collector breakdown voltage : VCBO= -160V, VCEO= -160V •Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) •Complementary pair with 2N5551N

Amplifier Transistor(PNP Silicon)

PNP Silicon

PNP high-voltage transistor

DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complement: 2N5551. FEATURES • Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • General purpose switching and amplification • Telephony applications.

PNP EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR ● Collector-Emitter Voltage: VCEO = 150V ● Collector Dissipation: Pc (max) = 625mW

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications???

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications

PNP General Purpose Amplifier

PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：带盒（TB） 描述：TRANS PNP 150V 0.6A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个