20A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC20N65 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

20A N-Channel Power MOSFET

Features ● RDS(ON) = 0.35Ω ● Ultra low gate charge ( Typical 150 nC ) ● Low reverse transfer capacitance ( CRSS = typical 36 pF ) ● Fast switching capability ● Avalanche energy specified ● Improved dv/dt capability, high ruggedness Application ● Power factor correction（PFC） ● Switched m

MOS管高压

650V N-CHANNEL MOSFET

650V N-channel MOSFET

丝印代码：20N650；N Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ulra Low Gate Charge cause lower diving requirements. 100% Avalanche Tested ROHS compliant

丝印代码：20N650；N Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ulra Low Gate Charge cause lower diving requirements. 100% Avalanche Tested ROHS compliant

丝印代码：20N650；N Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ulra Low Gate Charge cause lower diving requirements. 100% Avalanche Tested ROHS compliant

丝印代码：20N65C3；Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0

丝印代码：20N65C3；Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0

丝印代码：20N65C3；Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0

丝印代码：20N65M5；N-channel 650 V, 0.160 Ω typ., 18 A MDmesh M5 Power MOSFETs in TO-220FP, I²PAKFP and TO-3PF packages

Features  Extremely low RDS(on)  Low gate charge and input capacitance  Excellent switching performance  100 avalanche tested Applications  Switching applications Description These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology

丝印代码：20N65M5；N-channel 650 V, 0.160 Ω typ., 18 A MDmesh M5 Power MOSFETs in TO-220FP, I²PAKFP and TO-3PF packages

Features  Extremely low RDS(on)  Low gate charge and input capacitance  Excellent switching performance  100 avalanche tested Applications  Switching applications Description These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology

丝印代码：20N65M5；N-channel 650 V, 0.160 Ω typ., 18 A MDmesh M5 Power MOSFETs in TO-220FP, I²PAKFP and TO-3PF packages

Features  Extremely low RDS(on)  Low gate charge and input capacitance  Excellent switching performance  100 avalanche tested Applications  Switching applications Description These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology

丝印代码：20N65C3；New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：622.31 Kbytes Page：15 Pages

丝印代码：20N65C3；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

文件：1.94391 Mbytes Page：15 Pages

丝印代码：20N65C3；New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：622.31 Kbytes Page：15 Pages

丝印代码：20N65C3；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

文件：1.94391 Mbytes Page：15 Pages

丝印代码：20N65C3；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

文件：1.94391 Mbytes Page：15 Pages

丝印代码：20N65C3；New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：622.31 Kbytes Page：15 Pages

丝印代码：20N65AP；20A 650V N-channel enhancement mode field effect transistor

文件：891.65 Kbytes Page：6 Pages

丝印代码：20N65APS；20A 650V N-channel enhancement mode field effect transistor

文件：891.65 Kbytes Page：6 Pages

丝印代码：20N65AF；20A 650V N-channel enhancement mode field effect transistor

文件：891.65 Kbytes Page：6 Pages

20A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC20N65 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

20A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC20N65 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

N-CHANNEL POWER MOSFET

文件：246.84 Kbytes Page：5 Pages

20A 650V N-channel enhancement mode field effect transistor

文件：891.65 Kbytes Page：6 Pages

Super Junction MOSFET

文件：513.45 Kbytes Page：7 Pages

N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK

文件：1.17545 Mbytes Page：21 Pages

20 Amps,650 Volts N-CHANNEL MOSFET

文件：481.89 Kbytes Page：7 Pages

MOSFET 650V, 20A N-CHANNEL

FEATURE •Proprietary New Planar Technology •R DS(ON),typ. typ.=0.38 Ω@V GS =10V •Low Gate Charge Minimize Switching Loss •Fast Recovery Body Diode DESCRIPTION The AM20N65 is available in TO 220 and TO220F Packages. APPLICATIONS •Adaptor •TV Main Power •SMPS Power Supply •LCD Panel