N-channel 650 V, 0.160 廓 typ., 18 A MDmesh??V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages

Features ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100 avalanche tested Applications ■ Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary ve

N-channel 650 V, 0.160 Ω typ., 18 A MDmesh M5 Power MOSFETs in TO-220FP, I²PAKFP and TO-3PF packages

Features  Extremely low RDS(on)  Low gate charge and input capacitance  Excellent switching performance  100 avalanche tested Applications  Switching applications Description These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology

isc N-Channel MOSFET Transistor

文件：311.41 Kbytes Page：2 Pages

N-channel 650 V, 0.160 Ω typ., 18 A MDmesh M5 Power MOSFETs in TO-220FP, I²PAKFP and TO-3PF packages

Features  Extremely low RDS(on)  Low gate charge and input capacitance  Excellent switching performance  100 avalanche tested Applications  Switching applications Description These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology

N-channel 650 V, 0.160 廓 typ., 18 A MDmesh??V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages

Features ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100 avalanche tested Applications ■ Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary ve

N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK

文件：1.17545 Mbytes Page：21 Pages

isc N-Channel MOSFET Transistor

文件：313.94 Kbytes Page：2 Pages

N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK

文件：1.17545 Mbytes Page：21 Pages