丝印代码：20N65C3；Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0

500V-900V CoolMOS™ N-Channel Power MOSFET

650V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. Replacement for 650V CoolMOS™ C3 is CoolMOS™ P7. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

N-Channel MOSFET Transistor

文件：338.98 Kbytes Page：2 Pages

丝印代码：20N65C3；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

文件：1.94391 Mbytes Page：15 Pages

丝印代码：20N65C3；New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：622.31 Kbytes Page：15 Pages

New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

文件：1.94391 Mbytes Page：15 Pages

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：622.31 Kbytes Page：15 Pages

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：622.31 Kbytes Page：15 Pages

丝印代码：20N65C3；Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0

丝印代码：20N65C3；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

文件：1.94391 Mbytes Page：15 Pages