Features

 Extremely low RDS(on)

 Low gate charge and input capacitance

 Excellent switching performance

 100 avalanche tested

Applications

 Switching applications

Description

These devices are N-channel Power MOSFET

based on the MDmesh™ M5 innovative vertical

process technology combined with the wellknown

PowerMESH™ horizontal layout. The

resulting products offer extremely low onresistance,

making them particularly suitable for

applications requiring high power and superior

efficiency.