16 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalan

丝印代码：16N50C3；New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：729.27 Kbytes Page：14 Pages

丝印代码：16N50C3；New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：729.27 Kbytes Page：14 Pages

丝印代码：16N50C3；New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：729.27 Kbytes Page：14 Pages

丝印代码：16N50AP；16A 500V N-channel enhanced field effect transistor

文件：900.91 Kbytes Page：6 Pages

丝印代码：16N50APS；16A 500V N-channel enhanced field effect transistor

文件：900.91 Kbytes Page：6 Pages

丝印代码：16N50AF；16A 500V N-channel enhanced field effect transistor

文件：900.91 Kbytes Page：6 Pages

16 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalan

16 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalan

16A, 500V N-CHANNEL POWER MOSFET

The UTC 16N50-TC are N-Channel enhancement modepower field effect transistors (MOSFET) which are producedusing UTC’s proprietary, planar stripe, DMOS technology.These devices are suited for high efficiency switch modepower supply. To minimize on-state resistance, provide superiorswitching performanc RDS(ON) ≤ 0.5Ω @ VGS = 10V, ID = 8.0A Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness;

N-Channel UniFET™ Ultra FRFET™ MOSFET

Description\nUniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has mu • RDS(on) = 370 mΩ ( Typ.) @ VGS = 10 V, ID = 7.5 A\n• Low Crss (Typ. 20 pF)\n• Improved dv/dt Capability\n• LCD/LED/PDP TV\n• Uninterruptible Power Supply;

N-CHANNEL POWER MOSFET

文件：197.73 Kbytes Page：6 Pages

16A 500V N-channel enhanced field effect transistor

文件：900.91 Kbytes Page：6 Pages

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：729.27 Kbytes Page：14 Pages

16A竊?00V N-CHANNEL MOSFET

文件：329.21 Kbytes Page：6 Pages

场效应管(MOSFET)

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

500V N-Channel MOSFET

500V N-Channel MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 400mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM

TMOS E−FET Power Field Effect Transistor D3PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is

SMPS MOSFET

文件：169.76 Kbytes Page：8 Pages