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丝印代码:16N50C3;New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件:729.27 Kbytes Page:14 Pages

INFINEON

英飞凌

丝印代码:16N50C3;New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件:729.27 Kbytes Page:14 Pages

INFINEON

英飞凌

丝印代码:16N50C3;New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件:729.27 Kbytes Page:14 Pages

INFINEON

英飞凌

16N50C3

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件:729.27 Kbytes Page:14 Pages

INFINEON

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

INFINEON

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

INFINEON

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

INFINEON

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

INFINEON

英飞凌

更新时间:2026-8-4 15:57:00
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