位置:STFI11N60M2-EP > STFI11N60M2-EP详情

STFI11N60M2-EP中文资料

厂家型号

STFI11N60M2-EP

文件大小

303.63Kbytes

页面数量

13

功能描述

N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh™ M2 EP Power MOSFET in an I²PAKFP package

数据手册

下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

STFI11N60M2-EP数据手册规格书PDF详情

Features

• Extremely low gate charge

• Excellent output capacitance (COSS) profile

• Very low turn-off switching losses

• 100 avalanche tested

• Zener-protected

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET developed using MDmesh™

M2 enhanced performance (EP) technology. Thanks to its strip layout and an

improved vertical structure, the device exhibits low on-resistance, optimized switching

characteristics with very low turn-off switching losses, rendering it suitable for the

most demanding very high frequency converters.

更新时间:2025-10-8 20:54:00
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2023+
TO262F
1500
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12663
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ROHS+Original
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12663
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22+
TO2623
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