| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
10N65 | 10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 |   | |
10N65 | 650V N-Channel Power MOSFET RDS(ON) | SY 顺烨电子 | | |
10N65 | 650V N-Channel Planar MOSFET Features Ultra Low gate Charge Low Crss Fast switching capability | SY 顺烨电子 | | |
10N65 | 650V N-channel MOSFET | ETC 知名厂家 | ETC | |
10N65 | MOS管 | ETC 知名厂家 | ETC | |
10N65 | 场效应管 | HXYMOS 华轩阳电子 | | |
10N65 | N-channel power MOS tube 文件：494.87 Kbytes Page：9 Pages | UMW 友台半导体 | | |
10N65 | N-CHANNEL POWER MOSFET 文件：2.3676 Mbytes Page：8 Pages | SUNMATE 森美特 | | |
10N65 | F10A mps,650 Volts N-CHANNEL MOSFET 文件：193.92 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | |
10N65 | 10Amps 650 Voltage N Channel MOSFET 文件：186.46 Kbytes Page：2 Pages | FCI 富加宜 | | |
10N65 | N-Channel 650V (D-S) Power MOSFET 文件：2.33384 Mbytes Page：11 Pages | VBSEMI 微碧半导体 | | |
10N65 | N-Channel 6 50V (D-S) Power MOSFET 文件：2.17857 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | |
10N65 | Drain Current ID= 2A@ TC=25C 文件：136.58 Kbytes Page：2 Pages | ISC 无锡固电 | | |
10N65 | 10A 650V N-channel Enhancement Mode Power MOSFET 文件：1.07913 Mbytes Page：10 Pages | WXDH 东海半导体 | | |
10N65 | 10A 650V N-channel Enhancement Mode Power MOSFET 文件：1.07854 Mbytes Page：10 Pages | WXDH 东海半导体 | | |
10N65 | 10A 650V N-channel Enhancement Mode Power MOSFET 文件：1.07919 Mbytes Page：10 Pages | WXDH 东海半导体 | | |
10N65 | 10A 650V N-channel Enhancement Mode Power MOSFET 文件：1.0784 Mbytes Page：10 Pages | WXDH 东海半导体 | | |
10N65 | N-CHANNEL POWER MOSFET 文件：820.97 Kbytes Page：7 Pages | ZSELEC 淄博圣诺 | | |
10N65 | 650V N-Channel Power MOSFET 文件：2.1241 Mbytes Page：9 Pages | DYELEC 迪一电子 | | |
650V N-Channel Planar MOSFET Features Ultra Low gate Charge Low Crss Fast switching capability | SY 顺烨电子 | | ||
650V N-Channel Enhancement Mode MOSFET Description The AP10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system min | EVVOSEMI 翊欧 | | ||
650V N-Channel Enhancement Mode MOSFET Description The AP10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system min | EVVOSEMI 翊欧 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
650V N-Channel Enhancement Mode MOSFET Description The AP10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system min | EVVOSEMI 翊欧 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：396.55 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：2.33384 Mbytes Page：11 Pages | VBSEMI 微碧半导体 | | ||
N-Channel Mosfet Transistor 文件：281.13 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
10A 650V N-channel enhancement mode field effect transistor 文件：984.99 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
10A 650V N-channel enhancement mode field effect transistor 文件：985.29 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
F10A mps,650 Volts N-CHANNEL MOSFET 文件：193.92 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | ||
N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE 文件：216.01 Kbytes Page：6 Pages | UTC 友顺 | | ||
650V N-Channel Power MOSFET 文件：527.71 Kbytes Page：4 Pages | CHENDA 辰达半导体 | | ||
N-CHANNEL POWER MOSFET 文件：2.3676 Mbytes Page：8 Pages | SUNMATE 森美特 | | ||
F10A mps,650 Volts N-CHANNEL MOSFET 文件：193.92 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | ||
N-channel power MOS tube 文件：494.87 Kbytes Page：9 Pages | UMW 友台半导体 | | ||
N-CHANNEL POWER MOSFET 文件：2.3676 Mbytes Page：8 Pages | SUNMATE 森美特 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：396.55 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：396.55 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-Channel 6 50V (D-S) Power MOSFET 文件：2.17862 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：396.55 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：396.55 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：396.55 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE 文件：216.01 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：396.55 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：396.55 Kbytes Page：9 Pages | UTC 友顺 | | ||
F10A mps,650 Volts N-CHANNEL MOSFET 文件：193.92 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | ||
10A竊?50V N-CHANNEL MOSFET 文件：300.7 Kbytes Page：5 Pages | KIA 可易亚半导体 | | ||
N-CHANNEL POWER MOSFET 文件：2.3676 Mbytes Page：8 Pages | SUNMATE 森美特 | | ||
10A, 650V N-CHANNEL POWER MOSFET 文件：233.55 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTION FET 文件：229.4 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-Channel 6 50V (D-S) Power MOSFET 文件：2.17877 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANJIT/强茂 |
24+ |
NA/ |
3650 |
原装现货,当天可交货,原型号开票 |
|||
士兰微 |
2023+ |
TO-220 |
425300 |
原厂全新正品旗舰店优势现货 |
|||
UTC/友顺 |
25+ |
TO-220F1 |
51848 |
百分百原装现货 实单必成 欢迎询价 |
|||
ST |
24+ |
TO-220F |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
UTC/友顺 |
21+ |
TO-220F1 |
6856 |
百域芯优势 实单必成 可开13点增值税 |
|||
UTC/友顺 |
2020+ |
TO-220F |
880000 |
明嘉莱只做原装正品现货 |
|||
长电 |
25+23+ |
TO-220F |
23712 |
绝对原装正品全新进口深圳现货 |
|||
UTC/友顺 |
24+ |
TO-220F |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
UTC(友顺) |
25+ |
TO-220F1 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
UTC(友顺) |
2447 |
TO-220F(TO-220IS) |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
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