| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
10N65 | 丝印代码：10N65；10A 650V N-channel Enhancement Mode Power MOSFET 文件：1.07913 Mbytes Page：10 Pages | WXDH 东海半导体 |   | |
10N65 | 丝印代码：10N65；10A 650V N-channel Enhancement Mode Power MOSFET 文件：1.07854 Mbytes Page：10 Pages | WXDH 东海半导体 | | |
10N65 | 丝印代码：10N65；10A 650V N-channel Enhancement Mode Power MOSFET 文件：1.07919 Mbytes Page：10 Pages | WXDH 东海半导体 | | |
10N65 | 丝印代码：10N65；10A 650V N-channel Enhancement Mode Power MOSFET 文件：1.0784 Mbytes Page：10 Pages | WXDH 东海半导体 | | |
丝印代码：10N65；N-CHANNEL ENHANCEMENT MODE MOSFET FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test | RECTRON 丽正 | | ||
丝印代码：10N65；N-CHANNEL ENHANCEMENT MODE MOSFET FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test | RECTRON 丽正 | | ||
丝印代码：10N65；N-CHANNEL ENHANCEMENT MODE MOSFET FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test | RECTRON 丽正 | | ||
丝印代码：10N65；N-CHANNEL ENHANCEMENT MODE MOSFET FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test | RECTRON 丽正 | | ||
10N65 | 650V N-Channel Power MOSFET RDS(ON) | SY 顺烨电子 | | |
10N65 | 650V N-Channel Planar MOSFET Features Ultra Low gate Charge Low Crss Fast switching capability | SY 顺烨电子 | | |
10N65 | 650V N-Channel Planar MOSFET Description 650V N-Channel Planar MOSFET 10N65 is high voltage MOSFET family based on advanced planar stripe DMOS technology. This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device fami | SHUNYE 顺烨电子 | | |
10N65 | 10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | |
10N65 | N-CHANNEL POWER MOSFET 文件：820.97 Kbytes Page：7 Pages | ZSELEC 淄博圣诺 | | |
10N65 | N-Channel 650V (D-S) Power MOSFET 文件：2.33384 Mbytes Page：11 Pages | VBSEMI 微碧半导体 | | |
10N65 | N-Channel 6 50V (D-S) Power MOSFET 文件：2.17857 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | |
10N65 | F10A mps,650 Volts N-CHANNEL MOSFET 文件：193.92 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | |
10N65 | Drain Current ID= 2A@ TC=25C 文件：136.58 Kbytes Page：2 Pages | ISC 无锡固电 | | |
10N65 | N-CHANNEL POWER MOSFET 文件：2.3676 Mbytes Page：8 Pages | SUNMATE 森美特 | | |
10N65 | 10Amps 650 Voltage N Channel MOSFET 文件：186.46 Kbytes Page：2 Pages | FCI 富加宜 | | |
10N65 | N-channel power MOS tube 文件：494.87 Kbytes Page：9 Pages | UMW 友台半导体 | | |
10N65 | 650V N-Channel Power MOSFET 文件：2.1241 Mbytes Page：9 Pages | DYELEC 迪一电子 | | |
10N65 | 650V N-channel MOSFET | MTW | | |
10N65 | MOS管 | ZG | | |
10N65 | 场效应管 | HXYMOS 华轩阳电子 | | |
丝印代码：10N65AF；10A 650V N-channel enhancement mode field effect transistor 文件：984.99 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
丝印代码：10N65AS；10A 650V N-channel enhancement mode field effect transistor 文件：984.99 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
丝印代码：10N65AS；10A 650V N-channel enhancement mode field effect transistor 文件：984.99 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
丝印代码：10N65AF；10A 650V N-channel enhancement mode field effect transistor 文件：984.99 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
丝印代码：10N65AC；10A 650V N-channel enhancement mode field effect transistor 文件：984.99 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
丝印代码：10N65BF；10A 650V N-channel enhancement mode field effect transistor 文件：985.29 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
丝印代码：10N65BS；10A 650V N-channel enhancement mode field effect transistor 文件：985.29 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
丝印代码：10N65BS；10A 650V N-channel enhancement mode field effect transistor 文件：985.29 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
丝印代码：10N65BF；10A 650V N-channel enhancement mode field effect transistor 文件：985.29 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
丝印代码：10N65BC；10A 650V N-channel enhancement mode field effect transistor 文件：985.29 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
650V N-Channel Planar MOSFET Features Ultra Low gate Charge Low Crss Fast switching capability | SY 顺烨电子 | | ||
650V N-Channel Enhancement Mode MOSFET Description The AP10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system min | EVVOSEMI 翊欧 | | ||
650V N-Channel Enhancement Mode MOSFET Description The AP10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system min | EVVOSEMI 翊欧 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
650V N-Channel Enhancement Mode MOSFET Description The AP10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system min | EVVOSEMI 翊欧 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：396.55 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：2.33384 Mbytes Page：11 Pages | VBSEMI 微碧半导体 | | ||
N-Channel Mosfet Transistor 文件：281.13 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
10A 650V N-channel enhancement mode field effect transistor 文件：984.99 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
10A 650V N-channel enhancement mode field effect transistor 文件：985.29 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
F10A mps,650 Volts N-CHANNEL MOSFET 文件：193.92 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | ||
N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE 文件：216.01 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：2.3676 Mbytes Page：8 Pages | SUNMATE 森美特 | | ||
650V N-Channel Power MOSFET 文件：527.71 Kbytes Page：4 Pages | CHENDA 辰达半导体 | | ||
F10A mps,650 Volts N-CHANNEL MOSFET 文件：193.92 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | ||
N-channel power MOS tube 文件：494.87 Kbytes Page：9 Pages | UMW 友台半导体 | | ||
N-CHANNEL POWER MOSFET 文件：2.3676 Mbytes Page：8 Pages | SUNMATE 森美特 | |
10N65产品属性
- 类型
描述
- Vdss(V)：
650
- Vgss(V)：
30
- Id(A)：
10
- Package：
TO-220/TO-220F/TO-22...
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC |
13+ |
TO220F |
2500 |
原装现货价格有优势量大可以发货 |
|||
ST |
24+ |
TO-220F |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
UTC/友顺 |
2026+ |
TO-220F1 |
51848 |
百分百原装现货 实单必成 欢迎询价 |
|||
UTC/友顺 |
21+ |
TO-220F |
34000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
UTC/友顺 |
25+ |
TO-220F |
32360 |
UTC/友顺全新特价10N65L-TF3-T即刻询购立享优惠#长期有货 |
|||
UTC(友顺) |
24+/25+ |
TO-220F1 |
50 |
UTC原厂一级代理商,价格优势! |
|||
长电 |
25+23+ |
TO-220F |
23712 |
绝对原装正品全新进口深圳现货 |
|||
UTC/友顺 |
21+ |
TO-220F1 |
6856 |
百域芯优势 实单必成 可开13点增值税 |
|||
UTC/友顺 |
2020+ |
TO-220F |
880000 |
明嘉莱只做原装正品现货 |
|||
GGA |
2450+ |
TO-220F |
18500 |
只做原厂原装正品终端客户免费申请样品 |
10N65芯片相关品牌
10N65规格书下载地址
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2020-11-13
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