| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
10N65 | 10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 |   | |
10N65 | 650V N-Channel Power MOSFET RDS(ON) | SY 顺烨电子 | | |
10N65 | 650V N-Channel Planar MOSFET Features Ultra Low gate Charge Low Crss Fast switching capability | SY 顺烨电子 | | |
10N65 | N-channel power MOS tube 文件：494.87 Kbytes Page：9 Pages | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | |
10N65 | N-CHANNEL POWER MOSFET 文件：2.3676 Mbytes Page：8 Pages | SUNMATE 森美特 | | |
10N65 | F10A mps,650 Volts N-CHANNEL MOSFET 文件：193.92 Kbytes Page：2 Pages | CHONGQING 重庆平伟实业 | | |
10N65 | 10Amps 650 Voltage N Channel MOSFET 文件：186.46 Kbytes Page：2 Pages | FCI 戈采 | | |
10N65 | N-Channel 650V (D-S) Power MOSFET 文件：2.33384 Mbytes Page：11 Pages | VBSEMI 微碧半导体 | | |
10N65 | N-Channel 6 50V (D-S) Power MOSFET 文件：2.17857 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | |
10N65 | Drain Current ID= 2A@ TC=25C 文件：136.58 Kbytes Page：2 Pages | ISC 无锡固电 | | |
10N65 | 10A 650V N-channel Enhancement Mode Power MOSFET 文件：1.07913 Mbytes Page：10 Pages | WXDH 东海半导体 | | |
10N65 | 10A 650V N-channel Enhancement Mode Power MOSFET 文件：1.07854 Mbytes Page：10 Pages | WXDH 东海半导体 | | |
10N65 | 10A 650V N-channel Enhancement Mode Power MOSFET 文件：1.07919 Mbytes Page：10 Pages | WXDH 东海半导体 | | |
10N65 | 10A 650V N-channel Enhancement Mode Power MOSFET 文件：1.0784 Mbytes Page：10 Pages | WXDH 东海半导体 | | |
10N65 | N-CHANNEL POWER MOSFET 文件：820.97 Kbytes Page：7 Pages | ZSELEC 淄博圣诺电子 | | |
10N65 | 650V N-Channel Power MOSFET 文件：2.1241 Mbytes Page：9 Pages | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | | |
650V N-Channel Planar MOSFET Features Ultra Low gate Charge Low Crss Fast switching capability | SY 顺烨电子 | | ||
650V N-Channel Enhancement Mode MOSFET Description The AP10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system min | EVVOSEMI 翊欧 | | ||
650V N-Channel Enhancement Mode MOSFET Description The AP10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system min | EVVOSEMI 翊欧 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl | UTC 友顺 | | ||
650V N-Channel Enhancement Mode MOSFET Description The AP10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system min | EVVOSEMI 翊欧 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：396.55 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：2.33384 Mbytes Page：11 Pages | VBSEMI 微碧半导体 | | ||
N-Channel Mosfet Transistor 文件：281.13 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
10A 650V N-channel enhancement mode field effect transistor 文件：984.99 Kbytes Page：6 Pages | YFWDIODE 佑风微电子 | | ||
10A 650V N-channel enhancement mode field effect transistor 文件：985.29 Kbytes Page：6 Pages | YFWDIODE 佑风微电子 | | ||
F10A mps,650 Volts N-CHANNEL MOSFET 文件：193.92 Kbytes Page：2 Pages | CHONGQING 重庆平伟实业 | | ||
N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE 文件：216.01 Kbytes Page：6 Pages | UTC 友顺 | | ||
650V N-Channel Power MOSFET 文件：527.71 Kbytes Page：4 Pages | CHENDA 辰达半导体 | | ||
N-CHANNEL POWER MOSFET 文件：2.3676 Mbytes Page：8 Pages | SUNMATE 森美特 | | ||
F10A mps,650 Volts N-CHANNEL MOSFET 文件：193.92 Kbytes Page：2 Pages | CHONGQING 重庆平伟实业 | | ||
N-channel power MOS tube 文件：494.87 Kbytes Page：9 Pages | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | ||
N-CHANNEL POWER MOSFET 文件：2.3676 Mbytes Page：8 Pages | SUNMATE 森美特 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：396.55 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：396.55 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-Channel 6 50V (D-S) Power MOSFET 文件：2.17862 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：396.55 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：396.55 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：396.55 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE 文件：216.01 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：396.55 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：396.55 Kbytes Page：9 Pages | UTC 友顺 | | ||
F10A mps,650 Volts N-CHANNEL MOSFET 文件：193.92 Kbytes Page：2 Pages | CHONGQING 重庆平伟实业 | | ||
10A竊?50V N-CHANNEL MOSFET 文件：300.7 Kbytes Page：5 Pages | KIA 可易亚半导体 | | ||
N-CHANNEL POWER MOSFET 文件：2.3676 Mbytes Page：8 Pages | SUNMATE 森美特 | | ||
10A, 650V N-CHANNEL POWER MOSFET 文件：233.55 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTION FET 文件：229.4 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-Channel 6 50V (D-S) Power MOSFET 文件：2.17877 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL JUNCTION FET 文件：229.4 Kbytes Page：6 Pages | UTC 友顺 | | ||
10A, 650V N-CHANNEL POWER MOSFET 文件：233.55 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：273.84 Kbytes Page：6 Pages | UTC 友顺 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
东海 |
24+ |
TO-220 |
50000 |
只做原装，欢迎询价，量大价优 |
|||
UMW(友台半导体) |
25+ |
DIP |
2200 |
国产替换现货降本 |
|||
DONGHAI |
23+ |
TO-220 |
80000 |
原装正品,一级代理 |
|||
UTC/友顺 |
23+ |
TO-220F |
160000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
DESAY/德赛微 |
19+ |
TO-220 |
12000 |
原装正品现货,可开发票,假一赔十 |
|||
24+ |
N/A |
72000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
士兰微 |
1215+ |
TO220F |
150000 |
全新原装,绝对正品,公司大量现货供应. |
|||
UTC/友顺 |
25+ |
TO-220F |
32360 |
UTC/友顺全新特价10N65L-TF3-T即刻询购立享优惠#长期有货 |
|||
HXY MOSFET(华轩阳电子) |
24+ |
con |
2500 |
优势库存,原装正品 |
|||
东海 |
24+ |
TO-220 |
50000 |
全新原装,一手货源,全场热卖! |
10N65规格书下载地址
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