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型号 功能描述 生产厂家&企业 LOGO 操作
10N65

10A, 650V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

UTC

友顺

10N65

650V N-Channel Power MOSFET

RDS(ON)

SY

顺烨电子

10N65

650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

SY

顺烨电子

10N65

N-channel power MOS tube

文件:494.87 Kbytes Page:9 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

10N65

N-CHANNEL POWER MOSFET

文件:2.3676 Mbytes Page:8 Pages

SUNMATE

森美特

10N65

F10A mps,650 Volts N-CHANNEL MOSFET

文件:193.92 Kbytes Page:2 Pages

CHONGQING

重庆平伟实业

10N65

10Amps 650 Voltage N Channel MOSFET

文件:186.46 Kbytes Page:2 Pages

FCI

戈采

10N65

N-Channel 650V (D-S) Power MOSFET

文件:2.33384 Mbytes Page:11 Pages

VBSEMI

微碧半导体

10N65

N-Channel 6 50V (D-S) Power MOSFET

文件:2.17857 Mbytes Page:10 Pages

VBSEMI

微碧半导体

10N65

Drain Current ID= 2A@ TC=25C

文件:136.58 Kbytes Page:2 Pages

ISC

无锡固电

10N65

10A 650V N-channel Enhancement Mode Power MOSFET

文件:1.07913 Mbytes Page:10 Pages

WXDH

东海半导体

10N65

10A 650V N-channel Enhancement Mode Power MOSFET

文件:1.07854 Mbytes Page:10 Pages

WXDH

东海半导体

10N65

10A 650V N-channel Enhancement Mode Power MOSFET

文件:1.07919 Mbytes Page:10 Pages

WXDH

东海半导体

10N65

10A 650V N-channel Enhancement Mode Power MOSFET

文件:1.0784 Mbytes Page:10 Pages

WXDH

东海半导体

10N65

N-CHANNEL POWER MOSFET

文件:820.97 Kbytes Page:7 Pages

ZSELEC

淄博圣诺电子

10N65

650V N-Channel Power MOSFET

文件:2.1241 Mbytes Page:9 Pages

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

SY

顺烨电子

650V N-Channel Enhancement Mode MOSFET

Description The AP10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system min

EVVOSEMI

翊欧

650V N-Channel Enhancement Mode MOSFET

Description The AP10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system min

EVVOSEMI

翊欧

10A, 650V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

UTC

友顺

10A, 650V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

UTC

友顺

10A, 650V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

UTC

友顺

10A, 650V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

UTC

友顺

10A, 650V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

UTC

友顺

10A, 650V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

UTC

友顺

10A, 650V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

UTC

友顺

10A, 650V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

UTC

友顺

10A, 650V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

UTC

友顺

10A, 650V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

UTC

友顺

650V N-Channel Enhancement Mode MOSFET

Description The AP10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system min

EVVOSEMI

翊欧

N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:396.55 Kbytes Page:9 Pages

UTC

友顺

N-Channel 650V (D-S) Power MOSFET

文件:2.33384 Mbytes Page:11 Pages

VBSEMI

微碧半导体

N-Channel Mosfet Transistor

文件:281.13 Kbytes Page:2 Pages

ISC

无锡固电

10A 650V N-channel enhancement mode field effect transistor

文件:984.99 Kbytes Page:6 Pages

YFWDIODE

佑风微电子

10A 650V N-channel enhancement mode field effect transistor

文件:985.29 Kbytes Page:6 Pages

YFWDIODE

佑风微电子

F10A mps,650 Volts N-CHANNEL MOSFET

文件:193.92 Kbytes Page:2 Pages

CHONGQING

重庆平伟实业

N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE

文件:216.01 Kbytes Page:6 Pages

UTC

友顺

650V N-Channel Power MOSFET

文件:527.71 Kbytes Page:4 Pages

CHENDA

辰达半导体

N-CHANNEL POWER MOSFET

文件:2.3676 Mbytes Page:8 Pages

SUNMATE

森美特

F10A mps,650 Volts N-CHANNEL MOSFET

文件:193.92 Kbytes Page:2 Pages

CHONGQING

重庆平伟实业

N-channel power MOS tube

文件:494.87 Kbytes Page:9 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

N-CHANNEL POWER MOSFET

文件:2.3676 Mbytes Page:8 Pages

SUNMATE

森美特

N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:396.55 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:396.55 Kbytes Page:9 Pages

UTC

友顺

N-Channel 6 50V (D-S) Power MOSFET

文件:2.17862 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:396.55 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:396.55 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:396.55 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE

文件:216.01 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:396.55 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:396.55 Kbytes Page:9 Pages

UTC

友顺

F10A mps,650 Volts N-CHANNEL MOSFET

文件:193.92 Kbytes Page:2 Pages

CHONGQING

重庆平伟实业

10A竊?50V N-CHANNEL MOSFET

文件:300.7 Kbytes Page:5 Pages

KIA

可易亚半导体

N-CHANNEL POWER MOSFET

文件:2.3676 Mbytes Page:8 Pages

SUNMATE

森美特

10A, 650V N-CHANNEL POWER MOSFET

文件:233.55 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL JUNCTION FET

文件:229.4 Kbytes Page:6 Pages

UTC

友顺

N-Channel 6 50V (D-S) Power MOSFET

文件:2.17877 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-CHANNEL JUNCTION FET

文件:229.4 Kbytes Page:6 Pages

UTC

友顺

10A, 650V N-CHANNEL POWER MOSFET

文件:233.55 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:273.84 Kbytes Page:6 Pages

UTC

友顺

更新时间:2025-8-17 9:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
东海
24+
TO-220
50000
只做原装,欢迎询价,量大价优
UMW(友台半导体)
25+
DIP
2200
国产替换现货降本
DONGHAI
23+
TO-220
80000
原装正品,一级代理
UTC/友顺
23+
TO-220F
160000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
DESAY/德赛微
19+
TO-220
12000
原装正品现货,可开发票,假一赔十
24+
N/A
72000
一级代理-主营优势-实惠价格-不悔选择
士兰微
1215+
TO220F
150000
全新原装,绝对正品,公司大量现货供应.
UTC/友顺
25+
TO-220F
32360
UTC/友顺全新特价10N65L-TF3-T即刻询购立享优惠#长期有货
HXY MOSFET(华轩阳电子)
24+
con
2500
优势库存,原装正品
东海
24+
TO-220
50000
全新原装,一手货源,全场热卖!

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