650V N-Channel Enhancement Mode MOSFET

Description The AP10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system min

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

650V N-Channel Enhancement Mode MOSFET

FEATURES • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives

650V N-Channel MOSFET

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650V N-Channel MOSFET

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StarMOST Power MOSFET

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