Description

The AP10N65F/P is silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

General Features

VDS = 650V ID =10A

RDS(ON) < 0.9Ω @ VGS=10V Type 0.75Ω

Application

Uninterruptible Power Supply(UPS)

Power Factor Correction (PFC)