| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
10N65A | 10A 650V N-channel enhancement mode field effect transistor 文件：984.99 Kbytes Page：6 Pages | YFWDIODE 佑风微 |   | |
丝印代码：10N65AF；10A 650V N-channel enhancement mode field effect transistor 文件：984.99 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
丝印代码：10N65AS；10A 650V N-channel enhancement mode field effect transistor 文件：984.99 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
丝印代码：10N65AS；10A 650V N-channel enhancement mode field effect transistor 文件：984.99 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
丝印代码：10N65AF；10A 650V N-channel enhancement mode field effect transistor 文件：984.99 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
丝印代码：10N65AC；10A 650V N-channel enhancement mode field effect transistor 文件：984.99 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
Planar Mosfet | GOFORD 谷峰半导体 | | ||
HIPERFET Power MOSFTETs HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications. | IXYS 艾赛斯 | | ||
650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives | PANJIT 強茂 | | ||
650V N-Channel MOSFET 文件：436.95 Kbytes Page：8 Pages | SEMIHOW | | ||
650V N-Channel MOSFET 文件：906.56 Kbytes Page：7 Pages | SEMIHOW | | ||
StarMOST Power MOSFET 文件：201.73 Kbytes Page：2 Pages | GOOD-ARK 固锝电子 | |
10N65A产品属性
- 类型
描述
- Configuration：
N channel
- VDS(max)：
650V
- Id at 25℃(max)：
10A
- PD(max)：
156W50W
- Vgs(th)typ(V)：
3V
- RDS(on)(typ)(@10V)：
0.72Ω~0.85Ω
- Qg(nC)：
38.7
- Ciss：
1595
- Crss：
6.83
10N65A芯片相关品牌
10N65A规格书下载地址
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DdatasheetPDF页码索引
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