丝印代码：10N65；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

650V N-Channel Enhancement Mode MOSFET

FEATURES • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives

650V N-Channel MOSFET

文件：436.95 Kbytes Page：8 Pages

650V N-Channel MOSFET

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StarMOST Power MOSFET

文件：201.73 Kbytes Page：2 Pages