丝印代码：100N03；N-Channel Enhancement Mode Power MOSFET

Featurese 30V, 100A Rosow 3.88mQ@Ves = 10V (Typ) «Advanced Trench Technology + Provide Excellent Rosco and Low Gate Charge « Lead free product is acquired

丝印代码：100N03A；30V N-Channel Power

Features VDS = 30V,ID =90A RDS(ON),3.8 mΩ(Typ) @ VGS =10V RDS(ON), 6.4mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances

丝印代码：100N03LS；OptiMOS?? Power-MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc

丝印代码：100N08N；N-channel, normal level

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x Ros(on) product (FOM) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC) for target applications

丝印代码：100N08N；N-channel, normal level

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x Ros(on) product (FOM) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC) for target applications

丝印代码：100N06SA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

丝印代码：100N06SA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

丝印代码：100N650；This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.

Features High ruggedness for motor control VCE(sat) positive temperature coefficient Very soft, fast recovery anti-parallel diode Low EMI Maximum junction temperature 175°C Applications PV Inverter UPS Power Welder Haloge n -f r e e

丝印代码：100N40；N-Channel Enhancement Mode Power MOSFET

Description The RM100N40DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =100A RDS(ON)

丝印代码：100N40；N-Channel Enhancement Mode Power MOSFET

General Features VDS =40V,ID =100A RDS(ON)

丝印代码：100N60；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60AT2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

丝印代码：100N60；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60BT2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

丝印代码：100N60；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60HD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

丝印代码：100N06；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =65V,ID =100A RDS(ON)

丝印代码：100N60；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60T7 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

丝印代码：100N120AG；Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package

Features • AEC-Q101 qualified • High speed switching performance • Very fast and robust intrinsic body diode • Low capacitance Applications • Traction inverters • DC-DC converters • Solar inverters • OBC Description This silicon carbide Power MOSFET device has been developed using S

丝印代码：100N10F7；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

丝印代码：100N10F7；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

丝印代码：100N10LF7；Automotive-grade N-channel 100 V, 5 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package

Feature  Designed for automotive applications and AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel P

丝印代码：100N10F7；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

丝印代码：100N10F7；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

丝印代码：100N3LLH6；N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6)STripFET™ VI DeepGATE™ Power MOSFET

Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge Application ■ Switching applications Description This product utilizes the 6th generation of design rules

丝印代码：100N3LLH7；N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6) STripFET™ VII DeepGATE™ Power MOSFET

Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness Application ■ Switching applications Description This device utilizes the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. Th

丝印代码：100N10F7；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

丝印代码：100N03；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features  30V , 100A RDSON (typ)= 2.9mΩ @ VGS =10V RDSON (typ)= 4.3mΩ @ VGS =4.5V  Advanced Trench Technology  Provide Excellent RDS(ON) and Low Gate Charge  Lead free product is acquired Application  Load Switch  PWM Application  Power management 100 UIS TESTED! 100 ΔVds TEST

丝印代码：100N30；N-Channel Enhancement Mode Power MOSFET

文件：225.12 Kbytes Page：7 Pages

丝印代码：100N60；N-Channel Enhancement Mode Power MOSFET

文件：239.2 Kbytes Page：7 Pages

丝印代码：100N65AG；Automotive-grade silicon carbide Power MOSFET, 650 V, 95 A, 20 m廓 (typ., TJ = 25 째C) in an H2PAK-7 package

文件：623.47 Kbytes Page：15 Pages

丝印代码：100N6F7；N-channel 60 V, 4.7 m??typ.,100 A STripFET??F7 Power MOSFET in a D짼PAK package

文件：555.77 Kbytes Page：15 Pages

丝印代码：100N6F7；N-channel 60 V, 4.6 m??typ., 46 A STripFET??F7 Power MOSFET in a TO-220FP package

文件：419.46 Kbytes Page：13 Pages

丝印代码：100N10F7；N-channel 100 V, 0.0062 廓 typ., 19 A, STripFET??VII DeepGATE?? Power MOSFET in a PowerFLAT??5x6 package

文件：1.40189 Mbytes Page：16 Pages

丝印代码：100N6LF6；N-channel 60 V, 3.3 m廓 typ., 25 A STripFET??VI DeepGATE?? Power MOSFET in a PowerFLAT??5x6 package

文件：2.35851 Mbytes Page：15 Pages

Rectifier Diodes

FEATURES High density cell design for ultra low Rps(on) ® Excellent package for good heat dissipation Fully characterized Avalanche voltage and current ® Special process technology for high ESD capability Good stability and uniformity with high Eas Excellent package for good heat dissipation

N-CHANNEL 30V - 0.0045??- 80A - DPAK - IPAK Planar STripFET??MOSFET

Description This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore

N-CHANNEL 30V - 0.0045??- 80A - DPAK - IPAK Planar STripFET??MOSFET

Description This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore

N-channel, normal level

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x Ros(on) product (FOM) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC) for target applications

N-channel 30V - 0.0045OHM - 80A - DPAK - IPAK Planar STripFET TM II Power MOSFET

Description This Power MOSFET is the latest refinement of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical alignment steps

Diode ??Diode Module

Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance • Available in both M1 and M2 package

Standard Recovery Diodes (Stud and Flat Base Type)

Features ● Diffused Series ● Industrial grade ● Available in Normal and Reverse polarity ● Metric and UNF thread type

Phase Control Thyristors, 100A

Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Metric thread type available • Low thermal resistance

Non-isolated Thyristor Module

Features • Low voltage three-phase • High surge current of 2500A @ 60Hz • Easy construction • Non-isolated • Mounting base as common anode

Thyristor - Diode Module

Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance • Available in both M1 & M2 package

Thyristor - Diode Module

Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance • Available in both M1 & M2 package

100A, 15V N-CHANNEL POWER TRENCH MOSFET

文件：133.68 Kbytes Page：3 Pages

DFN-中低压MOS

MOS管

Trench Mosfet

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N-Channel 30-V (D-S) MOSFET

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N-Channel 40-V (D-S) MOSFET

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N-Channel 40-V (D-S) MOSFET

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N-Channel Power MOSFET

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100A, 15V N-CHANNEL POWER TRENCH MOSFET

文件：133.68 Kbytes Page：3 Pages

100A, 15V N-CHANNEL POWER TRENCH MOSFET

文件：133.68 Kbytes Page：3 Pages

100A, 15V N-CHANNEL POWER TRENCH MOSFET

文件：133.68 Kbytes Page：3 Pages

100A, 15V N-CHANNEL POWER TRENCH MOSFET

文件：133.68 Kbytes Page：3 Pages

100A, 15V N-CHANNEL POWER TRENCH MOSFET

文件：133.68 Kbytes Page：3 Pages