丝印代码：100N03；N-Channel Enhancement Mode Power MOSFET

Featurese 30V, 100A Rosow 3.88mQ@Ves = 10V (Typ) «Advanced Trench Technology + Provide Excellent Rosco and Low Gate Charge « Lead free product is acquired

丝印代码：100N03；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features  30V , 100A RDSON (typ)= 2.9mΩ @ VGS =10V RDSON (typ)= 4.3mΩ @ VGS =4.5V  Advanced Trench Technology  Provide Excellent RDS(ON) and Low Gate Charge  Lead free product is acquired Application  Load Switch  PWM Application  Power management 100 UIS TESTED! 100 ΔVds TEST

Rectifier Diodes

FEATURES High density cell design for ultra low Rps(on) ® Excellent package for good heat dissipation Fully characterized Avalanche voltage and current ® Special process technology for high ESD capability Good stability and uniformity with high Eas Excellent package for good heat dissipation

N-CHANNEL 30V - 0.0045??- 80A - DPAK - IPAK Planar STripFET??MOSFET

Description This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore

N-Channel 30-V (D-S) MOSFET

文件：1.62203 Mbytes Page：7 Pages

N-Channel Enhancement Mode Power MOSFET

DFN-中低压MOS

MOS管

丝印代码：100N03A；30V N-Channel Power

Features VDS = 30V,ID =90A RDS(ON),3.8 mΩ(Typ) @ VGS =10V RDS(ON), 6.4mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances

丝印代码：100N03LS；OptiMOS?? Power-MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc

N-CHANNEL 30V - 0.0045??- 80A - DPAK - IPAK Planar STripFET??MOSFET

Description This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore

90A竊?0V N-CHANNEL MOSFET

文件：212.13 Kbytes Page：5 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.62203 Mbytes Page：7 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.64113 Mbytes Page：7 Pages

N-CHANNEL 30V - 0.0045??- 80A - DPAK - IPAK Planar STripFET??MOSFET

Description This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ TrenchMOS™ technology ■ Low on-state resistance ■ Avalanche ruggedness rated ■ Logic level compatible ■ Surface mount package. Applications ■ DC to DC converters ■

Switching (30V, 10A)

Features 1) Low Qg. 2) Low on-resistance. 3) Exellent resistance to damage from static electric Structure Silicon N-channel MOS FET

Switching (30V, 짹10A)

Switching (30V, ±10A) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). Applications Power switching, DC/DC converter.

N-CHANNEL 30V - 0.0045??- 80A - DPAK - IPAK Planar STripFET??MOSFET

Description This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore