60V PNP medium transistor

Description Packaged in the SOT223 outline this new low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • High Gain • Low saturation voltage • High peak current • 7V reverse

60V PNP medium transistor

60V, SOT23F, PNP medium power transistor

Description This medium voltage PNP transistor is designed for applications requiring high-gain and low-saturation voltage. The SOT23F package is PIN compatible with the industry standard SOT23 footprint while offering a lower profile and higher power dissipation for applications where power dens

60V, SOT23F, PNP medium power transistor

Description This medium voltage PNP transistor has been designed for applications requiring high gain and low saturation voltage. The SOT23F package is PIN compatible with the industry standard SOT23 footprint whilst offering a lower profile and higher power dissipation for applications where pow

60V, SOT23F, PNP medium power transistor

Description This medium voltage PNP transistor has been designed for applications requiring high gain and low saturation voltage. The SOT23F package is PIN compatible with the industry standard SOT23 footprint whilst offering a lower profile and higher power dissipation for applications where pow

60V, SOT23F, PNP medium power transistor

Description This medium voltage PNP transistor is designed for applications requiring high-gain and low-saturation voltage. The SOT23F package is PIN compatible with the industry standard SOT23 footprint while offering a lower profile and higher power dissipation for applications where power dens

60V PNP medium transistor

Description Packaged in the SOT223 outline this new low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • High Gain • Low saturation voltage • High peak current • 7V reverse

60V PNP medium transistor in SOT223

Features • BVCEO > -60V • BVECO > -7V • IC = 5A High Continuous Current • Low Saturation Voltage VCE(sat)

60V PNP medium transistor in SOT223

Features • BVCEO > -60V • BVECO > -7V • IC = 5A High Continuous Current • Low Saturation Voltage VCE(sat)

60V PNP medium transistor

Description Packaged in the SOT223 outline this new low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • High Gain • Low saturation voltage • High peak current • 7V reverse

60V PNP medium transistor

Description Packaged in the SOT89 outline this new low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • High gain • Low saturation voltage • High peak current • 7V reverse b

60V PNP medium transistor in SOT89

Description Packaged in SOT89 outline, this low-saturation PNP transistor offers extremely low on-state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • BVCEO > -60V • BVECO > -7V • IC = -4.5 High Continuous Collector Current • I

60V PNP medium transistor in SOT89

Description Packaged in SOT89 outline, this low-saturation PNP transistor offers extremely low on-state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • BVCEO > -60V • BVECO > -7V • IC = -4.5 High Continuous Collector Current • I

60V PNP medium transistor

Description Packaged in the SOT89 outline this new low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • High gain • Low saturation voltage • High peak current • 7V reverse b

60V PNP MEDIUM POWER TRANSISTOR

文件：432.65 Kbytes Page：7 Pages

60V PNP MEDIUM POWER TRANSISTOR

文件：432.65 Kbytes Page：7 Pages

60V PNP MEDIUM POWER TRANSISTOR

文件：432.65 Kbytes Page：7 Pages

PNP, 60V, 5A, SOT223

60V PNP MEDIUM POWER TRANSISTOR IN SOT223

文件：836.23 Kbytes Page：7 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 5A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP, 60V, 4.5A, SOT89

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 4.5A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

Introduction The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access

60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

Introduction The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access

60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

Introduction The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access

RF POWER TRANSISTORS Ldmos Enhanced Technology

DESCRIPTION The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET19060C is designed for high gain and broadband performance operating in common source

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical CDMA Performance: 1960 MHz, 2