DESCRIPTION

The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET19060C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

• IS-97 CDMA PERFORMANCES

POUT = 7.5 W

EFF. = 18

• EDGE PERFORMANCES

POUT = 30 W

EFF. = 25

• GSM PERFORMANCES

POUT = 65 W

EFF. = 45

• EXCELLENT THERMAL STABILITY

• BeO FREE PACKAGE

• INTERNAL INPUT/OUTPUT MATCHING

• ESD PROTECTION