RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical CDMA Performance: 1960 MHz, 26 Volts IS-95 CDMA

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical CDMA Performance: 1960 MHz, 2

RF POWER FIELD EFFECT TRANSISTORS

1930-1990 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical CDMA Performance: 1960 MHz, 26 Volts IS-95 CDMA

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical CDMA Performance: 1960 MHz, 26 Volts IS-95 CDMA

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical CDMA Performance: 1960 MHz, 2

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical CDMA Performance: 1960 MHz, 2

1990 MHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET

RF POWER TRANSISTORS Ldmos Enhanced Technology

DESCRIPTION The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET19060C is designed for high gain and broadband performance operating in common source

60V, SOT23F, NPN high gain power transistor

Description This mid voltage NPN transistor has been designed for applications requiring high gain and low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of

60V, SOT23F, PNP medium power transistor

Description This medium voltage PNP transistor has been designed for applications requiring high gain and low saturation voltage. The SOT23F package is PIN compatible with the industry standard SOT23 footprint whilst offering a lower profile and higher power dissipation for applications where pow

60V, SOT23F, PNP medium power transistor

Description This medium voltage PNP transistor has been designed for applications requiring high gain and low saturation voltage. The SOT23F package is PIN compatible with the industry standard SOT23 footprint whilst offering a lower profile and higher power dissipation for applications where pow