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型号 功能描述 生产厂家 企业 LOGO 操作
AGR19060EF

60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

Introduction The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access

TRIQUINT

RF POWER TRANSISTORS Ldmos Enhanced Technology

DESCRIPTION The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET19060C is designed for high gain and broadband performance operating in common source

STMICROELECTRONICS

意法半导体

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical CDMA Performance: 1960 MHz, 2

MOTOROLA

摩托罗拉

60V, SOT23F, NPN high gain power transistor

Description This mid voltage NPN transistor has been designed for applications requiring high gain and low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of

ZETEX

60V, SOT23F, PNP medium power transistor

Description This medium voltage PNP transistor has been designed for applications requiring high gain and low saturation voltage. The SOT23F package is PIN compatible with the industry standard SOT23 footprint whilst offering a lower profile and higher power dissipation for applications where pow

ZETEX

60V, SOT23F, PNP medium power transistor

Description This medium voltage PNP transistor has been designed for applications requiring high gain and low saturation voltage. The SOT23F package is PIN compatible with the industry standard SOT23 footprint whilst offering a lower profile and higher power dissipation for applications where pow

ZETEX

AGR19060EF产品属性

  • 类型

    描述

  • 型号

    AGR19060EF

  • 功能描述

    射频MOSFET电源晶体管 RF LDMOS Transistor

  • RoHS

  • 制造商

    Freescale Semiconductor

  • 配置

    Single

  • 频率

    1800 MHz to 2000 MHz

  • 增益

    27 dB

  • 输出功率

    100 W

  • 封装/箱体

    NI-780-4

  • 封装

    Tray

更新时间:2026-8-2 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AGR
24+
SOP16
100
AGR
22+
TSSOP
8200
原装现货库存.价格优势!!
TRIQUINT
23+
TO-59
8510
原装正品代理渠道价格优势
AGR
24+
SOP-8
9600
原装现货,优势供应,支持实单!
FAIRCHILD
10+
TSSOP14
443
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SFH
00+
DIP4
7
原装现货海量库存欢迎咨询
ST
2602+
DIP28
5650
公司原厂原装现货假一罚十!特价出售!强势库存!
ADI/亚德诺
2511
原封装
66900
电子元器件采购降本30%!原厂直采,砍掉中间差价
AGR
23+
SOP-8
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ADI/亚德诺
26+
NA
60000
原装正品,可BOM配单

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