60V, SOT23F, NPN high gain power transistor

Description This mid voltage NPN transistor has been designed for applications requiring high gain and low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of

60V NPN HIGH GAIN POWER TRANSISTOR

Description Advanced process capability has been used to maximise the performance of this transistor. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance Featu

60V NPN HIGH GAIN POWER TRANSISTOR

Description Advanced process capability has been used to maximise the performance of this transistor. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance Featu

60V, SOT23F, NPN high gain power transistor

Description This mid voltage NPN transistor has been designed for applications requiring high gain and low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of

60V NPN low sat medium power transistor

Description Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Higher power dissipation SOT223 package • High peak current • Low sat

60V NPN low sat medium power transistor in SOT223

Features • BVCEO > 60V • IC = 7A Continuous Collector Current • ICM = 12A Peak Pulse Current • Low Saturation Voltage VCE(sat)

60V NPN low sat medium power transistor

Description Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Higher power dissipation SOT223 package • High peak current • Low sat

60V NPN low sat medium power transistor in SOT223

Features • BVCEO > 60V • IC = 7A Continuous Collector Current • ICM = 12A Peak Pulse Current • Low Saturation Voltage VCE(sat)

NPN, 60V, 5.5A, SOT23F

封装/外壳：SOT-23-3 扁平引线 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 60V 5.5A SOT23F 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN, 60V, 7A, SOT223

60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

文件：487.42 Kbytes Page：7 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 7A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

文件：487.42 Kbytes Page：7 Pages

60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

Introduction The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access

60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

Introduction The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access

60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

Introduction The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access

RF POWER TRANSISTORS Ldmos Enhanced Technology

DESCRIPTION The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET19060C is designed for high gain and broadband performance operating in common source

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical CDMA Performance: 1960 MHz, 2