型号 功能描述 生产厂家 企业 LOGO 操作

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second leve

ONSEMI

安森美半导体

MOSFET ??SiC Power, Single N-Channel, TO247-4L 1200 V, 160 m, 17.3 A

文件:277.86 Kbytes Page:8 Pages

ONSEMI

安森美半导体

MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 160 m, 17.3 A

文件:277.94 Kbytes Page:8 Pages

ONSEMI

安森美半导体

更新时间:2026-2-4 22:59:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
TO-247-4
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi(安森美)
25+
TO-247-4
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
ON
2025+
TO-247
3000
原装正品现货供应商原厂渠道物美价优
THAILAND
24+
SOP-8
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
PULSE/普思
2450+
SOP
9850
只做原装正品现货或订货假一赔十!
PULSE
23+
NA
5606
专做原装正品,假一罚百!
PULSE
25+23+
na
37995
绝对原装正品全新进口深圳现货
THAILAND
22+
SOP-8
3000
原装正品,支持实单
ONSEMI
23+
MOSFET
5864
原装原标原盒 给价就出 全网最低
24+
3000
公司存货

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