型号 功能描述 生产厂家 企业 LOGO 操作

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed,

Xicor

Xicor Inc.

High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

RENESAS

瑞萨

1 Megabit (128K x 8-Bit) EEPROM

DESCRIPTION: Maxwell Technologies’ 28C010T high-density 1 Megabit(128K x 8-Bit) EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C010T is capable of in-system electrical byte and page programmability. It has a 128-byte page progra

Maxwell

128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS28C010 is capable of in system electrical Byte and Page reprogrammability. FEATURES • Access speed: 120, 150, 200, a

AUSTIN

Hardware Data Protection

GENERAL DESCRIPTION The AS28C010 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS28C010 is capable of in system electrical Byte and Page reprogrammability. FEATURES • Access speed: 120, 150, 200, and 250ns • Data Retention:

MICROSS

1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

Atmel

爱特梅尔

1-megabit (128K x 8) Paged Parallel EEPROM

文件:410.38 Kbytes Page:17 Pages

Atmel

爱特梅尔

XM28C010产品属性

  • 类型

    描述

  • 型号

    XM28C010

  • 制造商

    XICOR

  • 制造商全称

    Xicor Inc.

  • 功能描述

    High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

更新时间:2025-12-23 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
XICOR
24+
CDIP32
600
只做自己库存 全新原装进口正品假一赔百 可开13%增
xilinx
22+
CDIP32
6800
XICOR
24+
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
XICOR
QQ咨询
189-8877-7135
105
全新原装 研究所指定供货商
OMRON/欧姆龙
2450+
NA
9850
只做原装正品现货!或订货假一赔十!
OMRON
ROHS
13352
一级代理 原装正品假一罚十价格优势长期供货
XIC
23+
65480
OMRON/欧姆龙
2508+
/
320680
一级代理,原装现货
XICOR
22+
CDIP
12245
现货,原厂原装假一罚十!
OMRON
7
全新原装 货期两周

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