位置：首页 > IC中文资料第11823页 > XM28C010P
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
XM28C010P | High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. |   | |
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array | RENESAS 瑞萨 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM 文件：657.33 Kbytes Page：11 Pages | ATMEL 爱特梅尔 | | ||
5 Volt, Byte Alterable E2PROM 文件：127.06 Kbytes Page：25 Pages | XICOR Xicor Inc. | |
XM28C010P产品属性
- 类型
描述
- 型号
XM28C010P
- 制造商
XICOR
- 制造商全称
Xicor Inc.
- 功能描述
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MURATA/村田 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
XICOR |
QQ咨询 |
N/A |
113 |
全新原装 研究所指定供货商 |
|||
XM |
24+ |
DIP |
500 |
||||
muRata |
24+ |
SOT-163 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
MURATA/村田 |
2450+ |
SOT-23-6 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
MURATA |
23+ |
SOT23-6 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
MURATA(村田) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
MURATA/村田 |
2447 |
SOT-23-6 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
MURATA |
25+ |
SOT-163 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
MURATA |
04+ |
SOT23-6 |
9575 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
XM28C010P规格书下载地址
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DdatasheetPDF页码索引
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