位置：首页 > IC中文资料第11823页 > XM28C010P
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
XM28C010P | High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. |   | |
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, | XICOR Xicor Inc. | | ||
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array | RENESAS 瑞萨 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM 文件：657.33 Kbytes Page：11 Pages | ATMEL 爱特梅尔 | | ||
5 Volt, Byte Alterable E2PROM 文件：127.06 Kbytes Page：25 Pages | XICOR Xicor Inc. | |
XM28C010P产品属性
- 类型
描述
- 型号
XM28C010P
- 制造商
XICOR
- 制造商全称
Xicor Inc.
- 功能描述
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
XIC |
23+ |
65480 |
|||||
XICOR |
24+ |
CDIP32 |
600 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
XICOR |
三年内 |
1983 |
只做原装正品 |
||||
OMRON/欧姆龙 |
19+ |
DIP |
246716 |
原装现货 |
|||
OMRON 欧姆龙 |
23+ |
原封 原厂 |
10050 |
现货原装--电子元件更多数量咨询/样品批量支持 OMRO |
|||
xilinx |
25+ |
CDIP32 |
6000 |
全新现货 |
|||
OMRON 欧姆龙 |
ROHS+ Original 元件 继电器 |
原封 原厂 |
10050 |
现货原装--电子元件更多数量咨询/样品批量支持 OMRO |
|||
OMRON/欧姆龙 |
2026+ |
DIP |
6200 |
假一罚十/本公司只做原装正品 |
|||
XICOR |
22+ |
CDIP |
20000 |
公司只做原装 品质保障 |
|||
原厂 |
2540+ |
CDIP32 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
XM28C010P规格书下载地址
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DdatasheetPDF页码索引
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