AT28C010价格
参考价格：￥187.3315
型号：AT28C010-12JU 品牌：Atmel 备注：这里有AT28C010多少钱，2026年最近7天走势，今日出价，今日竞价，AT28C010批发/采购报价，AT28C010行情走势销售排行榜，AT28C010报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AT28C010 | 1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 |   | |
AT28C010 | 5V 1Mbit (128Kbit x 8) Parallel EEPROM with Software Data Protection The Microchip AT28C010 is a high-performance1-megabit Parallel EEPROM available in both Industrial and Military tempranges, offering access times to 120ns with power dissipation of 220mW (440mWmilitary). Deselected, CMOS standby current is less than 200µA (300µAmilitary). Access like static RAM for 128 Kbits x 8 (1 megabit)\n5V ± 10% Supply\nParallel Interface\n120ns access time\nSelf-Timed Erase and Write Cycles (10 ms max)\nPage Write and Byte Write\nData Polling for end of write detection\nLow Power Consumption\nRead / Write current 40 mA (Max)\nStandby current TTL 2 mA (Max), CMOS 200 ; | MICROCHIP 微芯科技 | | |
AT28C010 | Military Grade 1-Mbit (131,072 x 8) Paged Parallel EEPROM 文件：524.14 Kbytes Page：31 Pages | MICROCHIP 微芯科技 | | |
AT28C010 | 1-megabit (128K x 8) Paged Parallel EEPROM 文件：410.38 Kbytes Page：17 Pages | ATMEL 爱特梅尔 | | |
AT28C010 | 1-Megabit (128K x 8) Paged Parallel EEPROMs 文件：604.21 Kbytes Page：16 Pages | ATMEL 爱特梅尔 | | |
AT28C010 | 1 Megabit 128K x 8 Paged CMOS E2PROM 文件：657.33 Kbytes Page：11 Pages | ATMEL 爱特梅尔 | | |
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi | ATMEL 爱特梅尔 | | ||
AT28C010-12DK 1Mbit Parallel EEPROM High-performance 1-Mb EEPROM organized as 131,072 words by 8 bits. Manufactured with Microchip advanced nonvolatile CMOS technology, the device offers access times to 120ns with power dissipation of just 275mW. When the device is deselected, the CMOS standby current is less than 10mA.It is accessed | MICROCHIP 微芯科技 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi | ATMEL 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi | ATMEL 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi | ATMEL 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1-megabit (128K x 8) Paged Parallel EEPROM 文件：410.38 Kbytes Page：17 Pages | ATMEL 爱特梅尔 | | ||
1-Megabit (128K x 8) Paged Parallel EEPROMs 文件：604.21 Kbytes Page：16 Pages | ATMEL 爱特梅尔 | | ||
Automatic Page Write Operation 文件：476.21 Kbytes Page：17 Pages | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM 文件：657.33 Kbytes Page：11 Pages | ATMEL 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs 文件：300.87 Kbytes Page：19 Pages | ATMEL 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs 文件：241.26 Kbytes Page：18 Pages | ATMEL 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs 文件：241.26 Kbytes Page：18 Pages | ATMEL 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs 文件：300.87 Kbytes Page：19 Pages | ATMEL 爱特梅尔 | |
AT28C010产品属性
- 类型
描述
- Density (Organization)：
1Mb
- Organization：
128K x 8
- Operating Voltage Range (Vcc)：
4.5 to 4.5
- Temperature Range：
-40°C to +85°C
- Endurance：
10k Cycles
- Data Retention (Years)：
10
- Packages：
30\\CPGA32\\CERDIP32\\CLCC32\\FLATPACK32\\PLCC32\\TSOP
- Description：
Parallel EEPROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23 |
PLCC |
208 |
92 |
||||
ATMEL |
24+ |
SMD |
600 |
“芯达集团”专营军工百分之百原装进口 |
|||
ATMEL/爱特梅尔 |
2025+ |
LCC |
850 |
原装进口价格优 请找坤融电子! |
|||
Microchip Technology |
24+25+ |
16500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
||||
ATMEL |
25+ |
2 |
全新原装!优势库存热卖中! |
||||
ATMEL |
19+ |
DIP |
16300 |
||||
ATMEL |
14+ |
CDIP32 |
9860 |
大量原装进口现货,一手货源,一站式服务,可开17%增 |
|||
ATMEL/爱特梅尔 |
23+ |
BGA |
3500 |
正规渠道,只有原装! |
|||
ATMEL |
17+ |
PLCC |
6200 |
100%原装正品现货 |
|||
MICROCHIP/微芯 |
26+ |
PLCC |
86500 |
一级代理专营品牌!原装正品,现货为客户做到零风险!! |
AT28C010规格书下载地址
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2019-11-29
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- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
- P110
