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AT28C010价格
参考价格：￥187.3315
型号：AT28C010-12JU 品牌：Atmel 备注：这里有AT28C010多少钱，2026年最近7天走势，今日出价，今日竞价，AT28C010批发/采购报价，AT28C010行情走势销售排行榜，AT28C010报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AT28C010 | 1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 |   | |
AT28C010 | 1-megabit (128K x 8) Paged Parallel EEPROM 文件：410.38 Kbytes Page：17 Pages | ATMEL 爱特梅尔 | | |
AT28C010 | 1-Megabit (128K x 8) Paged Parallel EEPROMs 文件：604.21 Kbytes Page：16 Pages | ATMEL 爱特梅尔 | | |
AT28C010 | 1 Megabit 128K x 8 Paged CMOS E2PROM 文件：657.33 Kbytes Page：11 Pages | ATMEL 爱特梅尔 | | |
AT28C010 | Military Grade 1-Mbit (131,072 x 8) Paged Parallel EEPROM 文件：524.14 Kbytes Page：31 Pages | MICROCHIP 微芯科技 | | |
AT28C010 | 5V 1Mbit (128Kbit x 8) Parallel EEPROM with Software Data Protection | MICROCHIP 微芯科技 | | |
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi | ATMEL 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi | ATMEL 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi | ATMEL 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi | ATMEL 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | ATMEL 爱特梅尔 | | ||
1-megabit (128K x 8) Paged Parallel EEPROM 文件：410.38 Kbytes Page：17 Pages | ATMEL 爱特梅尔 | | ||
1-Megabit (128K x 8) Paged Parallel EEPROMs 文件：604.21 Kbytes Page：16 Pages | ATMEL 爱特梅尔 | | ||
Automatic Page Write Operation 文件：476.21 Kbytes Page：17 Pages | ATMEL 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM 文件：657.33 Kbytes Page：11 Pages | ATMEL 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs 文件：300.87 Kbytes Page：19 Pages | ATMEL 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs 文件：241.26 Kbytes Page：18 Pages | ATMEL 爱特梅尔 | | ||
AT28C010-12DK 1Mbit Parallel EEPROM | MICROCHIP 微芯科技 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs 文件：241.26 Kbytes Page：18 Pages | ATMEL 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs 文件：300.87 Kbytes Page：19 Pages | ATMEL 爱特梅尔 | |
AT28C010产品属性
- 类型
描述
- 型号
AT28C010
- 制造商
ATMEL
- 制造商全称
ATMEL Corporation
- 功能描述
1-megabit(128K x 8) Paged Parallel EEPROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microchip(微芯) |
24+ |
标准封装 |
10048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
Micron |
26+ |
32-TFSOP |
60000 |
只有原装,可BOM表配单 |
|||
Atmel(爱特梅尔) |
24+ |
7678 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
||||
MICROCHIP/微芯 |
25+ |
TSOP32 |
32360 |
MICROCHIP/微芯全新特价AT28C010E-12TU即刻询购立享优惠#长期有货 |
|||
MICROCHIP/微芯 |
26+ |
PLCC |
86500 |
一级代理专营品牌!原装正品,现货为客户做到零风险!! |
|||
Micron |
24+ |
32-LCC |
30000 |
原厂原装,价格优势,欢迎洽谈! |
|||
23 |
PLCC |
208 |
92 |
||||
ATMEL |
14+ |
CDIP32 |
9860 |
大量原装进口现货,一手货源,一站式服务,可开17%增 |
|||
ATEML |
2023+ |
LCC |
53500 |
正品,原装现货 |
|||
ATMEL |
24+ |
SMD |
600 |
“芯达集团”专营军工百分之百原装进口 |
AT28C010芯片相关品牌
AT28C010规格书下载地址
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2019-11-29
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