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AT28C010价格
参考价格：￥187.3315
型号：AT28C010-12JU 品牌：Atmel 备注：这里有AT28C010多少钱，2025年最近7天走势，今日出价，今日竞价，AT28C010批发/采购报价，AT28C010行情走势销售排行榜，AT28C010报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AT28C010 | 1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 |   | |
AT28C010 | 1-megabit (128K x 8) Paged Parallel EEPROM 文件：410.38 Kbytes Page：17 Pages | Atmel 爱特梅尔 | | |
AT28C010 | 1-Megabit (128K x 8) Paged Parallel EEPROMs 文件：604.21 Kbytes Page：16 Pages | Atmel 爱特梅尔 | | |
AT28C010 | 1 Megabit 128K x 8 Paged CMOS E2PROM 文件：657.33 Kbytes Page：11 Pages | Atmel 爱特梅尔 | | |
AT28C010 | Military Grade 1-Mbit (131,072 x 8) Paged Parallel EEPROM 文件：524.14 Kbytes Page：31 Pages | Microchip 微芯科技 | | |
AT28C010 | 5V 1Mbit (128Kbit x 8) Parallel EEPROM with Software Data Protection | Microchip 微芯科技 | | |
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi | Atmel 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi | Atmel 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi | Atmel 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi | Atmel 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m | Atmel 爱特梅尔 | | ||
1-megabit (128K x 8) Paged Parallel EEPROM 文件：410.38 Kbytes Page：17 Pages | Atmel 爱特梅尔 | | ||
1-Megabit (128K x 8) Paged Parallel EEPROMs 文件：604.21 Kbytes Page：16 Pages | Atmel 爱特梅尔 | | ||
Automatic Page Write Operation 文件：476.21 Kbytes Page：17 Pages | Atmel 爱特梅尔 | | ||
1 Megabit 128K x 8 Paged CMOS E2PROM 文件：657.33 Kbytes Page：11 Pages | Atmel 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs 文件：300.87 Kbytes Page：19 Pages | Atmel 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs 文件：241.26 Kbytes Page：18 Pages | Atmel 爱特梅尔 | | ||
AT28C010-12DK 1Mbit Parallel EEPROM | Microchip 微芯科技 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs 文件：241.26 Kbytes Page：18 Pages | Atmel 爱特梅尔 | | ||
Space 1-megabit (128K x 8) Paged Parallel EEPROMs 文件：300.87 Kbytes Page：19 Pages | Atmel 爱特梅尔 | |
AT28C010产品属性
- 类型
描述
- 型号
AT28C010
- 制造商
ATMEL
- 制造商全称
ATMEL Corporation
- 功能描述
1-megabit(128K x 8) Paged Parallel EEPROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ATMEL/爱特梅尔 |
23+ |
BGA |
3500 |
正规渠道,只有原装! |
|||
MICROCHIP/微芯 |
25+ |
TSOP32 |
32360 |
MICROCHIP/微芯全新特价AT28C010E-12TU即刻询购立享优惠#长期有货 |
|||
23 |
PLCC |
208 |
92 |
||||
Atmel(爱特梅尔) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ATMEL/爱特梅尔 |
23+ |
PLCC |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
Micron |
24+ |
32-TFSOP |
30000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
ATMEL |
25+ |
TSOP |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
Atmel |
25+23+ |
BGA |
20084 |
绝对原装正品全新进口深圳现货 |
|||
ATMEL |
22+ |
CDIP |
8000 |
原装正品支持实单 |
|||
ATMEL/爱特梅尔 |
25+ |
PLCC |
12500 |
全新原装现货,假一赔十 |
AT28C010规格书下载地址
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