位置：首页 > IC中文资料第6163页 > WFF2N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
WFF2N60 | Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficien | WINSEMIShenzhen Wenxian Microelectronics Co., Ltd 稳先微电子深圳市稳先微电子有限公司 |   | |
WFF2N60 | N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 8.5nC (Typ.) □ BVDSS=600V,ID=2A □ RDS(on): 5 Ω(Max) @VG=10V □ 100 Avalanche Tested | WISDOM | | |
WFF2N60 | 600V N-Channel MOSFET 文件：1.55693 Mbytes Page：6 Pages | WISDOM | | |
WFF2N60 | 600V N-Channel MOSFET | WISDOM | | |
WFF2N60 | Silicon N-Channel MOSFET | WINSEMIShenzhen Wenxian Microelectronics Co., Ltd 稳先微电子深圳市稳先微电子有限公司 | | |
600V N-Channel MOSFET 文件：1.55693 Mbytes Page：6 Pages | WISDOM | | ||
Silicon N-Channel MOSFET 文件：583.59 Kbytes Page：7 Pages | WINSEMIShenzhen Wenxian Microelectronics Co., Ltd 稳先微电子深圳市稳先微电子有限公司 | | ||
Silicon N-Channel MOSFET 文件：256.93 Kbytes Page：8 Pages | WINSEMIShenzhen Wenxian Microelectronics Co., Ltd 稳先微电子深圳市稳先微电子有限公司 | | ||
Silicon N-Channel MOSFET 文件：256.93 Kbytes Page：8 Pages | WINSEMIShenzhen Wenxian Microelectronics Co., Ltd 稳先微电子深圳市稳先微电子有限公司 | | ||
超结MOSFET | WINSEMIShenzhen Wenxian Microelectronics Co., Ltd 稳先微电子深圳市稳先微电子有限公司 | | ||
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h | MOTOROLA 摩托罗拉 | | ||
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h | MOTOROLA 摩托罗拉 | | ||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied | PHILIPS 飞利浦 | | ||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied | PHILIPS 飞利浦 | | ||
TMOS POWER FET 2.0 AMPERES 600 VOLTS 文件：271.17 Kbytes Page：10 Pages | MOTOROLA 摩托罗拉 | |
WFF2N60产品属性
- 类型
描述
- 型号
WFF2N60
- 制造商
WINSEMI
- 制造商全称
WINSEMI
- 功能描述
Silicon N-Channel MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
WINSEMI |
2016+ |
TO-220F |
3900 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
WISDOM |
24+ |
TO220F |
8000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
WISDON |
25+ |
TO220F |
200 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
WISDOM |
25+ |
TO-220F |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
WISDOM威士顿 |
2023 |
TO-220F |
274 |
全新原装 正品现货 |
|||
25+23+ |
TO-220 |
35493 |
绝对原装正品全新进口深圳现货 |
||||
WISDOM |
25+ |
TO-220F |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
WISDOM |
05+ |
原厂原装 |
3654 |
全新原装 绝对有货 |
|||
WISDOM |
22+ |
TO-220F |
12245 |
现货,原厂原装假一罚十! |
|||
WINSEMI |
24+ |
TO-220F |
43200 |
郑重承诺只做原装进口现货 |
WFF2N60规格书下载地址
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