型号 功能描述 生产厂家 企业 LOGO 操作
W12NA60

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

STMICROELECTRONICS

意法半导体

fast power mos transistor

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

STMICROELECTRONICS

意法半导体

600V N-Channel MOSFET

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PANJIT

強茂

600V N-Channel MOSFET

文件:345.06 Kbytes Page:8 Pages

PANJIT

強茂

更新时间:2025-12-28 23:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
24+
TO3P
30000
原装正品公司现货,假一赔十!
ST/意法
24+
NA/
5050
原装现货,当天可交货,原型号开票
ST
21+
TO3P
10000
只做原装,质量保证
ST
23+
TO-3P
5000
原装正品,假一罚十
ST
18+
TO3P
85600
保证进口原装可开17%增值税发票
ST
22+
TO3P
20000
原装 品质保证
ST
24+
TO3P
12800
原装正品现货支持实单
ST
20+
TO-247
35830
原装优势主营型号-可开原型号增税票
SST
原厂封装
9800
原装进口公司现货假一赔百
S
TO-247
22+
6000
十年配单,只做原装

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