型号 功能描述 生产厂家 企业 LOGO 操作

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and

VishayVishay Siliconix

威世科技

Trench MOS Schottky technology

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

VishayVishay Siliconix

威世科技

Trench MOS Schottky technology

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 T

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and

VishayVishay Siliconix

威世科技

Trench MOS Schottky technology

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 T

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:173.74 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:173.74 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:173.74 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:173.74 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

封装/外壳:TO-220-3 包装:管件 描述:DIODE ARRAY SCHOT 60V 5A TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

封装/外壳:TO-220-3 包装:卷带(TR) 描述:DIODE ARRAY SCHOT 60V 5A TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A

VishayVishay Siliconix

威世科技

106/206 In-Line Flanged Diaphragm Seals

FEATURES „ 316L Stainless steel top housing (standard) „ Available with diaphragm welded or bonded to top housing or removable threaded capsule diaphragms „ Flow through design reduces the possibility of clogging „ Large 21/2˝ diaphragm compatible with most Ashcroft instrumentation

ASHCROFT

雅斯科

Customer Specification

Construction Diameters (In) 1) Component 1 5 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.049 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 3 GREEN/YELLOW 5 WHITE 2 BLUE 4 BROWN 2) Cable Assembly 5 Components Cabled a)

ALPHAWIREAlpha Wire

阿尔法电线

Customer Specification

Construction Diameters (In) 1) Component 1 5 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.049 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 3 GREEN/YELLOW 5 WHITE 2 BLUE 4 BROWN 2) Cable Assembly 5 Components Cabled a)

ALPHAWIREAlpha Wire

阿尔法电线

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Riedon

Precision Wirewound Resistors

文件:318.25 Kbytes Page:2 Pages

Riedon

VT106产品属性

  • 类型

    描述

  • 型号

    VT106

  • 制造商

    Velleman Inc

更新时间:2025-10-4 14:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
/
TO-220
25
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY
23+
TO-220
50000
全新原装正品现货,支持订货
VISHAY/威世
23+
TO-220-3
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
24+
N/A
70000
一级代理-主营优势-实惠价格-不悔选择
Vishay Semiconductor Diodes Di
22+
TO220AB
9000
原厂渠道,现货配单
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
VIS
23+
TO-220AB
6000
原装正品,支持实单
Vishay General Semiconductor -
25+
TO-220-3
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
VISHAY
23+
TO-220
2520
原厂原装正品
VISHAY
25+
TO-220
3675
就找我吧!--邀您体验愉快问购元件!

VT106数据表相关新闻