型号 功能描述 生产厂家 企业 LOGO 操作
VT1060C-E3

Trench MOS Schottky technology

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an

VishayVishay Siliconix

威世科技

VT1060C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

VishayVishay Siliconix

威世科技

VT1060C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:173.74 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

封装/外壳:TO-220-3 包装:卷带(TR) 描述:DIODE ARRAY SCHOT 60V 5A TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:173.74 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

ISC

无锡固电

Trench MOS Schottky technology

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

VishayVishay Siliconix

威世科技

Trench MOS Schottky technology

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

VishayVishay Siliconix

威世科技

VT1060C-E3产品属性

  • 类型

    描述

  • 型号

    VT1060C-E3

  • 制造商

    Vishay Semiconductors

  • 功能描述

    10A,60V,DUAL TRENCH SKY RECT.

更新时间:2025-10-5 8:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VIS
23+
TO-220AB
6000
原装正品,支持实单
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
Vishay Semiconductor Diodes Di
23+
TO220AB
8000
只做原装现货
VISHAY
12+
TO-220
20
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VIS
22+
TO-220AB
6000
十年配单,只做原装
VISHAY/威世
23+
TO-220-3
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
24+
N/A
70000
一级代理-主营优势-实惠价格-不悔选择
VIS
25+
TO-TO-220AB
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
VISHAY
23+
TO-220
2520
原厂原装正品
VISHAY
25+
TO-220
3675
就找我吧!--邀您体验愉快问购元件!

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