型号 功能描述 生产厂家 企业 LOGO 操作
VT1060C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and

VishayVishay Siliconix

威世科技

VT1060C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:173.74 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

VT1060C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

VishayVishay Siliconix

威世科技

Trench MOS Schottky technology

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

VishayVishay Siliconix

威世科技

Trench MOS Schottky technology

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 T

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and

VishayVishay Siliconix

威世科技

Trench MOS Schottky technology

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 T

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:173.74 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:173.74 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:173.74 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

封装/外壳:TO-220-3 包装:管件 描述:DIODE ARRAY SCHOT 60V 5A TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

封装/外壳:TO-220-3 包装:卷带(TR) 描述:DIODE ARRAY SCHOT 60V 5A TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A

VishayVishay Siliconix

威世科技

Direct-acting 2/2-way or 3/2-way toggle valve

The 0131 valve is a direct-acting toggle valve. A variety of seal material combinations are available depending on the application. Thanks to the diaphragm separation between actuator and fluid housing, aggressive media such as acids and alkaline solutions can also be safely controlled. The ass

BURKERT

宝帝流体控制系统

Six-channel QTouch® Touch Sensor IC

Features  Configurations: ● Can be configured as a combination of keys and input/output lines  Number of QTouch® Keys: ● Two to six  Number of I/O Lines: ● Seven, configurable for input or output, with PWM control for LED driving  Technology: ● Patented spread-spect

Microchip

微芯科技

Original Strain Relief Bushings

文件:112.65 Kbytes Page:1 Pages

Heyco

IEC Appliance Inlet C14 with Fuseholder 1-pole

文件:426.16 Kbytes Page:3 Pages

SCHURTER

硕特

IEC Appliance Inlet C14 with Fuseholder 1-pole

文件:457.83 Kbytes Page:4 Pages

SCHURTER

硕特

VT1060C产品属性

  • 类型

    描述

  • 型号

    VT1060C

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier

更新时间:2025-10-4 13:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
23+
TO-220
50000
全新原装正品现货,支持订货
VISHAY/威世
23+
TO-220-3
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
24+
N/A
70000
一级代理-主营优势-实惠价格-不悔选择
Vishay Semiconductor Diodes Di
22+
TO220AB
9000
原厂渠道,现货配单
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
VIS
23+
TO-220AB
6000
原装正品,支持实单
VISHAY
/
TO-220
25
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Vishay General Semiconductor -
25+
TO-220-3
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
VISHAY
23+
TO-220
2520
原厂原装正品
VISHAY
25+
TO-220
3675
就找我吧!--邀您体验愉快问购元件!

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