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VP01价格
参考价格:¥3.7507
型号:VP0104N3-G 品牌:Microchip 备注:这里有VP01多少钱,2025年最近7天走势,今日出价,今日竞价,VP01批发/采购报价,VP01行情走势销售排行榜,VP01报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs General Description The Supertex VP0104 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the hi | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FET General Description The VP0104 low-threshold Enhancement-mode (normally-off) transistors use a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input imped | Microchip 微芯科技 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode Vertical DMOS FETs General Description The Supertex VP0104 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the hi | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FET General Description The VP0104 low-threshold Enhancement-mode (normally-off) transistors use a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input imped | Microchip 微芯科技 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FET General Description The VP0106 low-threshold Enhancement-mode (normally-off) transistors use a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input imped | Microchip 微芯科技 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode Vertical DMOS FET General Description The VP0106 low-threshold Enhancement-mode (normally-off) transistors use a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input imped | Microchip 微芯科技 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FET General Description The VP0109 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impe | Microchip 微芯科技 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode Vertical DMOS FET General Description The VP0109 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impe | Microchip 微芯科技 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:225.63 Kbytes Page:4 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:225.63 Kbytes Page:4 Pages | SUTEX | |||
Trans MOSFET P-CH 40V 0.25A 3-Pin TO-92 | ETC 知名厂家 | ETC | ||
Trans MOSFET P-CH 40V 0.25A 3-Pin TO-92 | ETC 知名厂家 | ETC | ||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:225.63 Kbytes Page:4 Pages | SUTEX | |||
-40 V, 8 ohm, P-channel enhancement-mode D-MOS power FET | ETC 知名厂家 | ETC | ||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:659.86 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:659.86 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:225.63 Kbytes Page:4 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:659.86 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:659.86 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:659.86 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:659.86 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:659.86 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:659.86 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:665.18 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:665.18 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:225.63 Kbytes Page:4 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:665.18 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:665.18 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:665.18 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:665.18 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:665.18 Kbytes Page:5 Pages | SUTEX |
VP01产品属性
- 类型
描述
- 型号
VP01
- 制造商
SUPERTEX
- 制造商全称
SUPERTEX
- 功能描述
P-Channel Enhancement-Mode Vertical DMOS FETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROCHIP/微芯 |
22+ |
TO-92-3 |
12245 |
现货,原厂原装假一罚十! |
|||
Microchip(微芯) |
2511 |
8484 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
||||
Microchip(微芯) |
23+ |
23520 |
公司只做原装正品,假一赔十 |
||||
SUPERTEX |
23+ |
TO-92 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
24+ |
N/A |
80000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
SUPERTEX |
24+ |
TO-92 |
6000 |
全新原装,一手货源,全场热卖! |
|||
MICROCHIP(美国微芯) |
2447 |
TO-92-3 |
31500 |
1000个/袋一级代理专营品牌!原装正品,优势现货,长 |
|||
SUPERTEX |
23+ |
TO-92 |
50000 |
全新原装正品现货,支持订货 |
|||
SILICONI |
专业铁帽 |
CAN3 |
1500 |
原装铁帽专营,代理渠道量大可订货 |
|||
SUPERTEX |
24+ |
TO-92 |
6000 |
只做原装,欢迎询价,量大价优 |
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VP01规格书下载地址
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VP01数据表相关新闻
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2020-4-12
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