OMNIFET II fully autoprotected Power MOSFET

Description The VNN7NV04P-E, VNS7NV04P-E, are monolithic devices designed in STMicroelectronics VIPower™ M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the ch

OMNIFET II fully autoprotected Power MOSFET

Description The VNN7NV04P-E, VNS7NV04P-E, are monolithic devices designed in STMicroelectronics VIPower™ M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the ch

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT） 描述：IC MOSFET OMNIFET II 8-SOIC 集成电路（IC） 配电开关，负载驱动器

OMNIFET II - 全自动保护功率MOSFET

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路（IC） 配电开关，负载驱动器

OMNIFET II fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNN7NV04, VNS7NV04, VND7NV04 VND7NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp

OMNIFET II fully autoprotected Power MOSFET

文件：618.75 Kbytes Page：37 Pages

OMNIFET II fully autoprotected Power MOSFET

文件：619.37 Kbytes Page：37 Pages

OMNIFET II fully autoprotected Power MOSFET

文件：619.37 Kbytes Page：37 Pages