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VND7NV04价格
参考价格：￥4.5696
型号：VND7NV04-E 品牌：STMicroelectronics 备注：这里有VND7NV04多少钱，2025年最近7天走势，今日出价，今日竞价，VND7NV04批发/采购报价，VND7NV04行情走势销售排行榜，VND7NV04报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VND7NV04 | ?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNN7NV04, VNS7NV04, VND7NV04 VND7NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 |   | |
VND7NV04 | OMNIFET II fully autoprotected Power MOSFET Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po | STMICROELECTRONICS 意法半导体 | | |
VND7NV04 | 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
VND7NV04 | OMNIFET II fully autoprotected Power MOSFET 文件：618.75 Kbytes Page：37 Pages | STMICROELECTRONICS 意法半导体 | | |
VND7NV04 | OMNIFET II fully autoprotected Power MOSFET 文件：619.37 Kbytes Page：37 Pages | STMICROELECTRONICS 意法半导体 | | |
VND7NV04 | OMNIFET II：全自动保护功率MOSFET | STMICROELECTRONICS 意法半导体 | | |
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNN7NV04, VNS7NV04, VND7NV04 VND7NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNN7NV04, VNS7NV04, VND7NV04 VND7NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：618.75 Kbytes Page：37 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：619.37 Kbytes Page：37 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：619.37 Kbytes Page：37 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：619.37 Kbytes Page：37 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：619.37 Kbytes Page：37 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：619.37 Kbytes Page：37 Pages | STMICROELECTRONICS 意法半导体 | |
VND7NV04产品属性
- 类型
描述
- 型号
VND7NV04
- 功能描述
电源开关 IC - 配电 N-Ch 42V 6A OmniFET
- RoHS
否
- 制造商
Exar
- 输出端数量
1
- 开启电阻（最大值）
85 mOhms
- 开启时间（最大值）
400 us
- 关闭时间（最大值）
20 us
- 工作电源电压
3.2 V to 6.5 V
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-23-5
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
原装现货 |
25251 |
##公司100%原装现货,假一罚十!可含税13%免费提供样 |
|||
ST/意法 |
24+ |
TO252 |
20000 |
进口原装现货 |
|||
ST(意法) |
24+ |
TO-252-2(DPAK) |
10946 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ST(意法) |
25+ |
5000 |
只做原装 假一罚百 可开票 可售样 |
||||
ST |
24+ |
TO-252 |
1500 |
AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航 |
|||
ST/意法 |
25+ |
TO-252 |
32000 |
ST/意法全新特价VND7NV04TR-E即刻询购立享优惠#长期有货 |
|||
ST |
25+ |
TO252 |
9800 |
原厂原装假一赔十 |
|||
ST |
25+ |
TO252 |
6000 |
全新原装现货、诚信经营! |
|||
ST |
23+ |
350000 |
工厂库存 实单可谈 |
||||
ST/意法 |
2038+ |
TO-252 |
8000 |
原装正品假一罚十 |
VND7NV04芯片相关品牌
VND7NV04规格书下载地址
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VND7NV04数据表相关新闻
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原装现货 决无虚假 假一罚百
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DdatasheetPDF页码索引
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