位置:VNS7NV04PTR-E > VNS7NV04PTR-E详情

VNS7NV04PTR-E中文资料

厂家型号

VNS7NV04PTR-E

文件大小

370.03Kbytes

页面数量

29

功能描述

OMNIFET II fully autoprotected Power MOSFET

MOSFET OMNIFET II VIPower 60mOhm 6A 40V

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

VNS7NV04PTR-E数据手册规格书PDF详情

Description

The VNN7NV04P-E, VNS7NV04P-E, are monolithic devices designed in STMicroelectronics VIPower™ M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

Fault feedback can be detected by monitoring the voltage at the input pin.

Features

■ Linear current limitation

■ Thermal shutdown

■ Short circuit protection

■ Integrated clamp

■ Low current drawn from input pin

■ Diagnostic feedback through input pin

■ ESD protection

■ Direct access to the gate of the Power

MOSFET (analog driving)

■ Compatible with standard Power MOSFET in

compliance with the 2002/95/EC European Directive

VNS7NV04PTR-E产品属性

  • 类型

    描述

  • 型号

    VNS7NV04PTR-E

  • 功能描述

    MOSFET OMNIFET II VIPower 60mOhm 6A 40V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-10-22 15:30:00
供应商 型号 品牌 批号 封装 库存 备注 价格
STMicroelectronics
24+
8-SO
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
STMicroelectronics
25+
8-SOIC
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ST(意法)
24+
8-SOIC(0.154
5588
ST/意法
21+
NA
12500
只做全新原装公司现货特价
ST
21+
SOP8
3318
十年信誉,只做原装,有挂就有现货!
ON
21+22+
SOP-8
6000
全新原装正品 长期现货供应
ST/意法半导体
22+
SO-8
6000
原装正品现货 可开增值税发票
ST/意法
1603+
SOP8
2484
原装现货
ST/意法
24+
SOP8
16500
只做原装正品现货 假一赔十
ST/意法半导体
24+
SO-8
20000
现货